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TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-3600C19-8GSXWB 8GB

TwinMOS 8DPT5MK8-TATP 2GB vs G Skill Intl F4-3600C19-8GSXWB 8GB

总分
star star star star star
TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分
star star star star star
G Skill Intl F4-3600C19-8GSXWB 8GB

G Skill Intl F4-3600C19-8GSXWB 8GB

差异 规格 评论

差异

TwinMOS 8DPT5MK8-TATP 2GB 需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 19.4
    测试中的平均数值
G Skill Intl F4-3600C19-8GSXWB 8GB 需要考虑的原因
G Skill Intl F4-3600C19-8GSXWB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 53
    左右 -83% 更低的延时
  • 更快的写入速度，GB/s
    15.8 left arrow 1,590.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-3600C19-8GSXWB 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    53 left arrow 29
  • 读取速度，GB/s
    3,726.4 left arrow 19.4
  • 写入速度，GB/s
    1,590.1 left arrow 15.8
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    522 left arrow 3614

TwinMOS 8DPT5MK8-TATP 2GB RAM的比较

Swissbit SEU25664D6BC2EP-30 2GB
Micron Technology 9HTF12872JY80EE1D4 1GB

G Skill Intl F4-3600C19-8GSXWB 8GB RAM的比较

SK Hynix HMA851U6CJR6N-VK 4GB
Micron Technology 16ATF2G64AZ-3G2J1 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-3600C19-8GSXWB 8GB
G Skill Intl F4-3600C19-8GSXWB 8GB
内存RAM
Kingston SNY1600S11-4G-EDEG 4GB
Kingston SNY1600S11-4G-EDEG 4GB
Kingston KHX21334D4/8G 8GB
Kingston KHX21334D4/8G 8GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Kingston KHX2400C15D4/16GX 16GB
Kingston KHX2400C15D4/16GX 16GB
内存RAM
Samsung M378A2K43EB1-CWE 16GB
Samsung M378A2K43EB1-CWE 16GB
Crucial Technology 16G4UD2400.C16BD1 16GB
Crucial Technology 16G4UD2400.C16BD1 16GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Kingston KYXC0V-MIB 16GB
Kingston KYXC0V-MIB 16GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Crucial Technology CT8G4DFRA266.M4FE 8GB
Crucial Technology CT8G4DFRA266.M4FE 8GB
内存RAM
Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
Apacer Technology 78.C1GMM.DFW0C 8GB
Apacer Technology 78.C1GMM.DFW0C 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-2133C15-16GFX 16GB
G Skill Intl F4-2133C15-16GFX 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Kingston 9905622-055.A00G 4GB
Kingston 9905622-055.A00G 4GB
内存RAM
Crucial Technology CT16G4SFRA266.C8FE 16GB
Crucial Technology CT16G4SFRA266.C8FE 16GB
SK Hynix HMA81GS6DJR8N-VK 8GB
SK Hynix HMA81GS6DJR8N-VK 8GB
内存RAM
Corsair CMK64GX5M2B5200C40 32GB
Corsair CMK64GX5M2B5200C40 32GB
Samsung M471A5143EB1-CRC 4GB
Samsung M471A5143EB1-CRC 4GB
内存RAM
Kingston SNY1600S11-4G-EDEG 4GB
Kingston SNY1600S11-4G-EDEG 4GB
Samsung M391A1K43BB2-CTD 8GB
Samsung M391A1K43BB2-CTD 8GB
内存RAM
Kingston SNY1600S11-4G-EDEG 4GB
Kingston SNY1600S11-4G-EDEG 4GB
Kingston 99U5665-004.A00G 4GB
Kingston 99U5665-004.A00G 4GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Apacer Technology 78.B1GM3.C7W0B 4GB
Apacer Technology 78.B1GM3.C7W0B 4GB
内存RAM