TwinMOS 8DPT5MK8-TATP 2GB vs INTENSO 5641160 8GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

INTENSO 5641160 8GB

INTENSO 5641160 8GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 16.1

测试中的平均数值

INTENSO 5641160 8GB

需要考虑的原因
INTENSO 5641160 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 53

左右 -130% 更低的延时
更快的写入速度，GB/s

10.2 1,590.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

INTENSO 5641160 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 23
读取速度，GB/s

3,726.4 16.1
写入速度，GB/s

1,590.1 10.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

522 2613

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT4G4DFS8266.M8FF 4GB

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Corsair CMX8GX3M2A2000C9 4GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

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SK Hynix HMA84GR7MFR4N-TF 32GB

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G Skill Intl F3-2133C9-4GAB 4GB

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Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB

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Kingston ACR256X64D3S1333C9 2GB

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A-DATA Technology DQVE1908 512MB

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

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Corsair CM4B8G2J3000K15K 8GB

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Samsung M471B5173BH0-CK0 4GB

Corsair CMK8GX4M2D2666C16 4GB

Corsair CMK8GX4M2D2666C16 4GB

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Samsung M471B1G73DB0-YK0 8GB

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Apacer Technology GD2.1129WH.001 16GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

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Micron Technology 8ATF1G64HZ-2G3E1 8GB

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Kingston 9905403-444.A00LF 4GB

Team Group Inc. TEAMGROUP-UD4-3733 8GB

Team Group Inc. TEAMGROUP-UD4-3733 8GB