Kingston KP223C-ELD 2GB vs Teikon TMA81GU6AFR8N-UHSC 8GB

总分

Kingston KP223C-ELD 2GB

Kingston KP223C-ELD 2GB

总分

Teikon TMA81GU6AFR8N-UHSC 8GB

Teikon TMA81GU6AFR8N-UHSC 8GB

差异规格评论

差异

Kingston KP223C-ELD 2GB

需要考虑的原因
Kingston KP223C-ELD 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 30

左右 10% 更低的延时

Teikon TMA81GU6AFR8N-UHSC 8GB

需要考虑的原因
Teikon TMA81GU6AFR8N-UHSC 8GB

报告一个错误

更快的读取速度，GB/s

16.5 13.4

测试中的平均数值
更快的写入速度，GB/s

12.1 8.8

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston KP223C-ELD 2GB

Teikon TMA81GU6AFR8N-UHSC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 30
读取速度，GB/s

13.4 16.5
写入速度，GB/s

8.8 12.1
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2137 2969

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Gold Key Technology Co Ltd NMSO480E82-3200E 8GB

Gold Key Technology Co Ltd NMSO480E82-3200E 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Kllisre 99P5428-002.A00LF 8GB

Kllisre 99P5428-002.A00LF 8GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Kingston 9905734-063.A00G 32GB

Kingston 9905734-063.A00G 32GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Kingston XK2M26-MIE-NX 16GB

Kingston XK2M26-MIE-NX 16GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Essencore Limited IM44GU48N24-FFFHAB 4GB

Essencore Limited IM44GU48N24-FFFHAB 4GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

SanMax Technologies Inc. SMD4-U8G46ME-32AA 8GB

SanMax Technologies Inc. SMD4-U8G46ME-32AA 8GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Crucial Technology BLE4G4D32AEEA.K8FD 4GB

Crucial Technology BLE4G4D32AEEA.K8FD 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Apacer Technology AQD-D4U8GN24-SE 8GB

Apacer Technology AQD-D4U8GN24-SE 8GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Golden Empire CL18-20-20 D4-3600 8GB

Golden Empire CL18-20-20 D4-3600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Corsair CMD32GX4M4B2133C10 8GB

Corsair CMD32GX4M4B2133C10 8GB

Kingston KVT8FP-HYC 4GB

Kingston KVT8FP-HYC 4GB

Micron Technology 18ASF1G72PDZ-2G1A1 8GB

Micron Technology 18ASF1G72PDZ-2G1A1 8GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Apacer Technology GD2.1527CS.001 8GB

Apacer Technology GD2.1527CS.001 8GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Patriot Memory (PDP Systems) 3600 C14 Series 8GB

Patriot Memory (PDP Systems) 3600 C14 Series 8GB

Mushkin 996902 2GB

Mushkin 996902 2GB

G Skill Intl F4-3333C16-16GVR 16GB

G Skill Intl F4-3333C16-16GVR 16GB