TwinMOS 8DPT5MK8-TATP 2GB vs Kingston 9965690-002.A00G 8GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

Kingston 9965690-002.A00G 8GB

Kingston 9965690-002.A00G 8GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

Kingston 9965690-002.A00G 8GB

需要考虑的原因
Kingston 9965690-002.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 53

左右 -71% 更低的延时
更快的读取速度，GB/s

9.7 3

测试中的平均数值
更快的写入速度，GB/s

5.8 1,590.1

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

Kingston 9965690-002.A00G 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 31
读取速度，GB/s

3,726.4 9.7
写入速度，GB/s

1,590.1 5.8
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 23 29 37 38
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

522 1859

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Kingston 9965690-002.A00G 8GB

Kingmax Semiconductor KLDE88F-B8MO5 2GB

Kingmax Semiconductor KLDE88F-B8MO5 2GB

G Skill Intl F4-2400C16-8GRS 8GB

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Samsung M471B5673FH0-CH9 2GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

SK Hynix HMA425S6AFR6N-UH 2GB

SK Hynix HMA425S6AFR6N-UH 2GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Kingston MSI24D4S7D8MH-16 16GB

Kingston MSI24D4S7D8MH-16 16GB

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Kingston 99U5471-020.A00LF 4GB

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Kingston HP37D4U1S8ME-16X 16GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Kingston KF3200C16D4/32GX 32GB

Kingston KF3200C16D4/32GX 32GB