TwinMOS 8DPT5MK8-TATP 2GB vs Micron Technology 18ADF2G72AZ-2G3A1 16GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

Micron Technology 18ADF2G72AZ-2G3A1 16GB

Micron Technology 18ADF2G72AZ-2G3A1 16GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 17.8

测试中的平均数值

Micron Technology 18ADF2G72AZ-2G3A1 16GB

需要考虑的原因
Micron Technology 18ADF2G72AZ-2G3A1 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 53

左右 -89% 更低的延时
更快的写入速度，GB/s

14.7 1,590.1

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

Micron Technology 18ADF2G72AZ-2G3A1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 28
读取速度，GB/s

3,726.4 17.8
写入速度，GB/s

1,590.1 14.7
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

522 3660

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT25664AA800.M16FG 2GB

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Hexon Technology Pte Ltd HEXON 1GB

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SK Hynix HMT451S6BFR8A-PB 4GB

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Kingston 99U5713-002.A00G 4GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Kingston KHX3200C16D4/32GX 32GB

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Crucial Technology CT16G4SFD832A.M16FRS 16GB

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Samsung M393B1G70BH0-CK0 8GB

Kingston MSISID4S9S8ME-8 8GB

Kingston MSISID4S9S8ME-8 8GB