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A-DATA Technology AD73I1C1674EV 4GB
G Skill Intl F4-3300C16-8GTZSW 8GB

A-DATA Technology AD73I1C1674EV 4GB vs G Skill Intl F4-3300C16-8GTZSW 8GB

总分
star star star star star
A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

总分
star star star star star
G Skill Intl F4-3300C16-8GTZSW 8GB

G Skill Intl F4-3300C16-8GTZSW 8GB

差异 规格 评论

差异

A-DATA Technology AD73I1C1674EV 4GB 需要考虑的原因
A-DATA Technology AD73I1C1674EV 4GB
报告一个错误
G Skill Intl F4-3300C16-8GTZSW 8GB 需要考虑的原因
G Skill Intl F4-3300C16-8GTZSW 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 40
    左右 -100% 更低的延时
  • 更快的读取速度，GB/s
    20.3 left arrow 11.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.5 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
A-DATA Technology AD73I1C1674EV 4GB
G Skill Intl F4-3300C16-8GTZSW 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 20
  • 读取速度，GB/s
    11.3 left arrow 20.3
  • 写入速度，GB/s
    7.5 left arrow 15.5
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1654 left arrow 3632

A-DATA Technology AD73I1C1674EV 4GB RAM的比较

Samsung M471B5273EB0-CK0 4GB
KingSpec KingSpec 16GB

G Skill Intl F4-3300C16-8GTZSW 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
G Skill Intl F4-3300C16-8GTZSW 8GB
G Skill Intl F4-3300C16-8GTZSW 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Golden Empire CL14-16-16 D4-2400 16GB
Golden Empire CL14-16-16 D4-2400 16GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Samsung M378A1G44BB0-CWE 8GB
Samsung M378A1G44BB0-CWE 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F4-3333C16-4GRRD 4GB
G Skill Intl F4-3333C16-4GRRD 4GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Micron Technology CT8G4DFD8213.16FA11 8GB
Micron Technology CT8G4DFD8213.16FA11 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology CT8G4DFRA32A.M4FF 8GB
Crucial Technology CT8G4DFRA32A.M4FF 8GB
内存RAM
Elpida EBJ40UG8EFU0-GN-F 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB
Crucial Technology CT16G4SFD824A.C16FDD 16GB
Crucial Technology CT16G4SFD824A.C16FDD 16GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
ISD Technology Limited IM48GU48N21-FFFHM 8GB
ISD Technology Limited IM48GU48N21-FFFHM 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMA81GS6DJR8N-VK 8GB
SK Hynix HMA81GS6DJR8N-VK 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Micron Technology 8ATF51264HZ-2G1A2 4GB
Micron Technology 8ATF51264HZ-2G1A2 4GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Kingston KHX426C13/8G 8GB
Kingston KHX426C13/8G 8GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Crucial Technology CT16G4DFRA32A.M16FJ1 16GB
Crucial Technology CT16G4DFRA32A.M16FJ1 16GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
SanMax Technologies Inc. SMD4-U8G28MA-21P 8GB
SanMax Technologies Inc. SMD4-U8G28MA-21P 8GB
内存RAM
SK Hynix HMT31GR7CFR4C-PB 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
G Skill Intl F4-4266C19-8GTRG 8GB
G Skill Intl F4-4266C19-8GTRG 8GB
内存RAM