SK Hynix HMT351R7EFR8C-RD 4GB vs A-DATA Technology AO1P32NC8W1-BD2SHC 8GB

总分

SK Hynix HMT351R7EFR8C-RD 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

总分

A-DATA Technology AO1P32NC8W1-BD2SHC 8GB

A-DATA Technology AO1P32NC8W1-BD2SHC 8GB

差异规格评论

差异

SK Hynix HMT351R7EFR8C-RD 4GB

需要考虑的原因
SK Hynix HMT351R7EFR8C-RD 4GB

报告一个错误

低于PassMark测试中的延时，ns

37 58

左右 36% 更低的延时

A-DATA Technology AO1P32NC8W1-BD2SHC 8GB

需要考虑的原因
A-DATA Technology AO1P32NC8W1-BD2SHC 8GB

报告一个错误

更快的读取速度，GB/s

16 9.8

测试中的平均数值
更快的写入速度，GB/s

12.0 7.2

测试中的平均数值
更高的内存带宽，mbps

25600 14900

左右 1.72 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT351R7EFR8C-RD 4GB

A-DATA Technology AO1P32NC8W1-BD2SHC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 58
读取速度，GB/s

9.8 16.0
写入速度，GB/s

7.2 12.0
内存带宽，mbps

14900 25600

Other

描述

PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

9-10-9-28 / 1866 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2065 2504

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Micron Technology 16ATF2G64AZ-2G1A1 16GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Crucial Technology BLE16G4D32AEEA.K16FB 16GB

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Corsair CM4X8GF3000C15K4 8GB

Samsung M378B5773DH0-CH9 2GB

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