TwinMOS 8DPT5MK8-TATP 2GB vs Micron Technology 18ASF1G72PZ-2G1AV 8GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

Micron Technology 18ASF1G72PZ-2G1AV 8GB

Micron Technology 18ASF1G72PZ-2G1AV 8GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

低于PassMark测试中的延时，ns

53 60

左右 12% 更低的延时

Micron Technology 18ASF1G72PZ-2G1AV 8GB

需要考虑的原因
Micron Technology 18ASF1G72PZ-2G1AV 8GB

报告一个错误

更快的读取速度，GB/s

6.4 3

测试中的平均数值
更快的写入速度，GB/s

4.2 1,590.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

Micron Technology 18ASF1G72PZ-2G1AV 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 60
读取速度，GB/s

3,726.4 6.4
写入速度，GB/s

1,590.1 4.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

522 1400

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMT16GX4M2Z3200C16 8GB

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Kingston KHX3200C18D4/8G 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

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Kingston 99U5584-001.A00LF 4GB

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Crucial Technology CT4G4SFS8266.M8FE 4GB

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Mushkin 991988 (996988) 4GB

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G Skill Intl F4-4000C18-16GTRG 16GB

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Kingston 99U5474-013.A00LF 2GB

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DSL Memory D4SS1G082SH21A-B 16GB

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Apacer Technology AQD-D4U8GN26-SE 8GB

Apacer Technology AQD-D4U8GN26-SE 8GB