Corsair CMZ16GX3M2A2400C10 8GB vs Apacer Technology GD2.1527WC.001 8GB

总分

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

总分

Apacer Technology GD2.1527WC.001 8GB

Apacer Technology GD2.1527WC.001 8GB

差异规格评论

差异

Corsair CMZ16GX3M2A2400C10 8GB

需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB

报告一个错误

Apacer Technology GD2.1527WC.001 8GB

需要考虑的原因
Apacer Technology GD2.1527WC.001 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 37

左右 -19% 更低的延时
更快的读取速度，GB/s

15.4 11.4

测试中的平均数值
更快的写入速度，GB/s

9.0 7.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMZ16GX3M2A2400C10 8GB

Apacer Technology GD2.1527WC.001 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 31
读取速度，GB/s

11.4 15.4
写入速度，GB/s

7.4 9.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1683 2520

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B5170FH0-CK0 4GB

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Apacer Technology GD2.1527CS.001 8GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Kingston KF2933C17S4/32G 32GB

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Crucial Technology CT25664AA800.M16FM 2GB

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Corsair CMR64GX4M4C3000C15 16GB

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Corsair CMK16GX4M2A2800C16 8GB

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Kingston 2GB-DDR2 800Mhz 2GB

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Kingston 9905702-008.A00G 8GB

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Kingston 99U5474-028.A00LF 4GB

Micron Technology 8ATF1G64AZ-2G6D1 8GB

Micron Technology 8ATF1G64AZ-2G6D1 8GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Kllisre M471A1K43CB1-CTD 8GB

Kllisre M471A1K43CB1-CTD 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Micron Technology 18ADF2G72AZ-2G3B1 16GB

Micron Technology 18ADF2G72AZ-2G3B1 16GB

Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

Micron Technology 8ATF1G64HZ-2G6E1 8GB

Micron Technology 8ATF1G64HZ-2G6E1 8GB