TwinMOS 8DPT5MK8-TATP 2GB vs Micron Technology 4ATF1G64HZ-3G2E1 8GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

Micron Technology 4ATF1G64HZ-3G2E1 8GB

Micron Technology 4ATF1G64HZ-3G2E1 8GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 15.1

测试中的平均数值

Micron Technology 4ATF1G64HZ-3G2E1 8GB

需要考虑的原因
Micron Technology 4ATF1G64HZ-3G2E1 8GB

报告一个错误

低于PassMark测试中的延时，ns

35 53

左右 -51% 更低的延时
更快的写入速度，GB/s

9.6 1,590.1

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

Micron Technology 4ATF1G64HZ-3G2E1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 35
读取速度，GB/s

3,726.4 15.1
写入速度，GB/s

1,590.1 9.6
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

522 2502

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M391B5673EH1-CH9 2GB

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Kingston 99U5584-007.A00LF 4GB

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Nanya Technology M2Y51264TU88B0B-3C 512MB

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Corsair CMV16GX4M1A2133C15 16GB