TwinMOS 8DPT5MK8-TATP 2GB vs Micron Technology 4ATF51264AZ-2G3B1 4GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

Micron Technology 4ATF51264AZ-2G3B1 4GB

Micron Technology 4ATF51264AZ-2G3B1 4GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 15.6

测试中的平均数值

Micron Technology 4ATF51264AZ-2G3B1 4GB

需要考虑的原因
Micron Technology 4ATF51264AZ-2G3B1 4GB

报告一个错误

低于PassMark测试中的延时，ns

34 53

左右 -56% 更低的延时
更快的写入速度，GB/s

11.2 1,590.1

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

Micron Technology 4ATF51264AZ-2G3B1 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 34
读取速度，GB/s

3,726.4 15.6
写入速度，GB/s

1,590.1 11.2
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

522 2468

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M471B5173DB0-YK0 4GB

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Gloway International (HK) STK4U2133D15081C 8GB

Gloway International (HK) STK4U2133D15081C 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Gold Key Technology Co Ltd NMUD480E85-2666E 8GB

Gold Key Technology Co Ltd NMUD480E85-2666E 8GB

Samsung M393B5170FH0-CK0 4GB

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Crucial Technology BL16G32C16S4B.M8FB1 16GB

Crucial Technology BL16G32C16S4B.M8FB1 16GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Kingston RB26D4U9D8MEH-16 16GB

Kingston RB26D4U9D8MEH-16 16GB

Team Group Inc. Team-Elite-1333 4GB

Team Group Inc. Team-Elite-1333 4GB

Apacer Technology 78.DAGP2.4030B 16GB

Apacer Technology 78.DAGP2.4030B 16GB

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

G Skill Intl F4-4000C19-8GTZ 8GB

G Skill Intl F4-4000C19-8GTZ 8GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

G Skill Intl F4-3333C16-16GVK 16GB

G Skill Intl F4-3333C16-16GVK 16GB

SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

A-DATA Technology AO1E34RCTV2-BZWS 32GB

A-DATA Technology AO1E34RCTV2-BZWS 32GB

SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

InnoDisk Corporation M4C0-AGS1TCIK 16GB

InnoDisk Corporation M4C0-AGS1TCIK 16GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB

Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Micron Technology AFSD416ES1P 16GB

Micron Technology AFSD416ES1P 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMT32GX4M4C3466C16 8GB

Corsair CMT32GX4M4C3466C16 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

G Skill Intl F4-3200C16-8GTZRN 8GB

G Skill Intl F4-3200C16-8GTZRN 8GB