TwinMOS 8DPT5MK8-TATP 2GB vs Micron Technology 72ASS8G72LZ-2G3B2 64GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

Micron Technology 72ASS8G72LZ-2G3B2 64GB

Micron Technology 72ASS8G72LZ-2G3B2 64GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

Micron Technology 72ASS8G72LZ-2G3B2 64GB

需要考虑的原因
Micron Technology 72ASS8G72LZ-2G3B2 64GB

报告一个错误

低于PassMark测试中的延时，ns

38 53

左右 -39% 更低的延时
更快的读取速度，GB/s

9.3 3

测试中的平均数值
更快的写入速度，GB/s

6.6 1,590.1

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

Micron Technology 72ASS8G72LZ-2G3B2 64GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 38
读取速度，GB/s

3,726.4 9.3
写入速度，GB/s

1,590.1 6.6
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

522 2107

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT51264BD1339.M16F 4GB

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Mushkin MR[A/B]4U266GHHF16G 16GB

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Samsung M471A2K43DB1-CTD 16GB

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A-DATA Technology AD73I1C1674EV 4GB

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Kingston 9905703-008.A00G 16GB

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Crucial Technology CT8G4SFRA32A.M8FR 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

G Skill Intl F4-3200C16-8GTZB 8GB

G Skill Intl F4-3200C16-8GTZB 8GB

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

Crucial Technology CT16G4DFD824A.C16FDR 16GB

Crucial Technology CT16G4DFD824A.C16FDR 16GB

Corsair CMK64GX5M2B5200C40 32GB

Corsair CMK64GX5M2B5200C40 32GB

Kingston KHX3000C16D4/16GX 16GB

Kingston KHX3000C16D4/16GX 16GB