TwinMOS 8DPT5MK8-TATP 2GB vs Micron Technology 8ATF1G64HZ-2G6J1 8GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

Micron Technology 8ATF1G64HZ-2G6J1 8GB

Micron Technology 8ATF1G64HZ-2G6J1 8GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 15.7

测试中的平均数值

Micron Technology 8ATF1G64HZ-2G6J1 8GB

需要考虑的原因
Micron Technology 8ATF1G64HZ-2G6J1 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 53

左右 -56% 更低的延时
更快的写入速度，GB/s

11.6 1,590.1

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

Micron Technology 8ATF1G64HZ-2G6J1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 34
读取速度，GB/s

3,726.4 15.7
写入速度，GB/s

1,590.1 11.6
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

522 2776

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Kingston 9905471-002.A00LF 2GB

Micron Technology 4ATS1G64HZ-2G3B1 8GB

Micron Technology 4ATS1G64HZ-2G3B1 8GB

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

G Skill Intl F4-3200C15-16GTZKY 16GB

G Skill Intl F4-3200C15-16GTZKY 16GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

G Skill Intl F4-3600C18-16GTRG 16GB

G Skill Intl F4-3600C18-16GTRG 16GB

Kingston 9965525-018.A00LF 4GB

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Avexir Technologies Corporation T-20181206 8GB

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Samsung M378B5773DH0-CH9 2GB

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V-Color Technology Inc. TL8G36818C-E0P2AAS 8GB