TwinMOS 8DPT5MK8-TATP 2GB vs Micron Technology CT8G4DFD8213.16FA11 8GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

Micron Technology CT8G4DFD8213.16FA11 8GB

Micron Technology CT8G4DFD8213.16FA11 8GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 12

测试中的平均数值

Micron Technology CT8G4DFD8213.16FA11 8GB

需要考虑的原因
Micron Technology CT8G4DFD8213.16FA11 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 53

左右 -89% 更低的延时
更快的写入速度，GB/s

9.1 1,590.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

Micron Technology CT8G4DFD8213.16FA11 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 28
读取速度，GB/s

3,726.4 12.0
写入速度，GB/s

1,590.1 9.1
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

522 2347

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Essencore Limited KD48GU880-36A180U 8GB

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Crucial Technology BLT16G4D26BFT4.C16FD 16GB

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TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

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Corsair CMSX8GX4M2A2400C16 4GB

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Kingston HP16D3LS1KBGH/4G 4GB

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G Skill Intl F4-3200C14-16GVK 16GB

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Samsung 1600 CL10 Series 8GB

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Micron Technology 16ATF1G64HZ-2G1B1 8GB

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Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Corsair CM4X16GE2666C16K2 16GB

Corsair CM4X16GE2666C16K2 16GB

Crucial Technology CT25664AA800.M16FG 2GB

Crucial Technology CT25664AA800.M16FG 2GB

Corsair CMW64GX4M4Z2933C16 16GB

Corsair CMW64GX4M4Z2933C16 16GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Kingston 99U5701-049.A00G 16GB

Kingston 99U5701-049.A00G 16GB

Kingston KHX3000C15/16GX 16GB

Kingston KHX3000C15/16GX 16GB

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Crucial Technology 16G4UD2400.C16BD1 16GB