TwinMOS 8DPT5MK8-TATP 2GB vs Patriot Memory (PDP Systems) 3000 C18 Series 16GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

Patriot Memory (PDP Systems) 3000 C18 Series 16GB

Patriot Memory (PDP Systems) 3000 C18 Series 16GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 15.5

测试中的平均数值

Patriot Memory (PDP Systems) 3000 C18 Series 16GB

需要考虑的原因
Patriot Memory (PDP Systems) 3000 C18 Series 16GB

报告一个错误

低于PassMark测试中的延时，ns

36 53

左右 -47% 更低的延时
更快的写入速度，GB/s

12.8 1,590.1

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

Patriot Memory (PDP Systems) 3000 C18 Series 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 36
读取速度，GB/s

3,726.4 15.5
写入速度，GB/s

1,590.1 12.8
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

522 3050

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 18ASF2G72PDZ-2G3B1 16GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Apacer Technology D12.2326WH.001 16GB

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Corsair CML16GX3M2A1600C10 8GB

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A-DATA Technology DDR3 1600 4GB

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Samsung M393B5270CH0-CH9 4GB

Apacer Technology 78.C1GMS.C7Z0C 8GB

Apacer Technology 78.C1GMS.C7Z0C 8GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Kingston HP26D4U6D8ME-16X 16GB

Corsair CMV4GX3M1B1600C11 4GB

Corsair CMV4GX3M1B1600C11 4GB

G Skill Intl F4-4000C18-16GVK 16GB

G Skill Intl F4-4000C18-16GVK 16GB

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Samsung M386B4G70DM0-CMA4 32GB

Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB

Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB