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TwinMOS 8DPT5MK8-TATP 2GB
Patriot Memory (PDP Systems) 3200 C18 Series 8GB

TwinMOS 8DPT5MK8-TATP 2GB vs Patriot Memory (PDP Systems) 3200 C18 Series 8GB

总分
star star star star star
TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分
star star star star star
Patriot Memory (PDP Systems) 3200 C18 Series 8GB

Patriot Memory (PDP Systems) 3200 C18 Series 8GB

差异 规格 评论

差异

TwinMOS 8DPT5MK8-TATP 2GB 需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 19.5
    测试中的平均数值
Patriot Memory (PDP Systems) 3200 C18 Series 8GB 需要考虑的原因
Patriot Memory (PDP Systems) 3200 C18 Series 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 53
    左右 -66% 更低的延时
  • 更快的写入速度，GB/s
    14.9 left arrow 1,590.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
TwinMOS 8DPT5MK8-TATP 2GB
Patriot Memory (PDP Systems) 3200 C18 Series 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    53 left arrow 32
  • 读取速度，GB/s
    3,726.4 left arrow 19.5
  • 写入速度，GB/s
    1,590.1 left arrow 14.9
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    522 left arrow 3430

TwinMOS 8DPT5MK8-TATP 2GB RAM的比较

Swissbit SEU25664D6BC2EP-30 2GB
Micron Technology 9HTF12872JY80EE1D4 1GB

Patriot Memory (PDP Systems) 3200 C18 Series 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HMA851S6CJR6N-XN 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Patriot Memory (PDP Systems) 3200 C18 Series 8GB
Patriot Memory (PDP Systems) 3200 C18 Series 8GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Kingston XJ69DF-MIE2 8GB
Kingston XJ69DF-MIE2 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Corsair CMT32GX4M2C3000C15 16GB
Corsair CMT32GX4M2C3000C15 16GB
内存RAM
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Crucial Technology CT8G4SFD824A.C16FDD2 8GB
Crucial Technology CT8G4SFD824A.C16FDD2 8GB
内存RAM
SpecTek Incorporated PSD34G13332 4GB
SpecTek Incorporated PSD34G13332 4GB
Apacer Technology 78.CAGSZ.4070B 8GB
Apacer Technology 78.CAGSZ.4070B 8GB
内存RAM
Apacer Technology 78.01GA0.9K5 1GB
Apacer Technology 78.01GA0.9K5 1GB
Mushkin MR[A/B]4U360JNNM8G 8GB
Mushkin MR[A/B]4U360JNNM8G 8GB
内存RAM
Kingston 9905474-019.A00LF 2GB
Kingston 9905474-019.A00LF 2GB
Kingston HP26D4S9S8ME-8 8GB
Kingston HP26D4S9S8ME-8 8GB
内存RAM
Kingston 9905403-500.A01LF 8GB
Kingston 9905403-500.A01LF 8GB
Corsair CM4B16G7L2666A16K2-O 16GB
Corsair CM4B16G7L2666A16K2-O 16GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT16G4SFD824A.M16FA 16GB
Crucial Technology CT16G4SFD824A.M16FA 16GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Micron Technology M471A1K43BB1-CRC 8GB
Micron Technology M471A1K43BB1-CRC 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Gold Key Technology Co Ltd NMGD480E82-3200D 8GB
Gold Key Technology Co Ltd NMGD480E82-3200D 8GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Kingston 9905744-011.A00G 32GB
Kingston 9905744-011.A00G 32GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Crucial Technology BL8G24C16U4B.8FB 8GB
Crucial Technology BL8G24C16U4B.8FB 8GB
内存RAM
Samsung M471A5143SB1-CRC 4GB
Samsung M471A5143SB1-CRC 4GB
Patriot Memory (PDP Systems) PSD416G24002S 16GB
Patriot Memory (PDP Systems) PSD416G24002S 16GB
内存RAM