TwinMOS 8DPT5MK8-TATP 2GB vs Samsung M393A2K40BB0-CPB 16GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

Samsung M393A2K40BB0-CPB 16GB

Samsung M393A2K40BB0-CPB 16GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

低于PassMark测试中的延时，ns

53 54

左右 2% 更低的延时

Samsung M393A2K40BB0-CPB 16GB

需要考虑的原因
Samsung M393A2K40BB0-CPB 16GB

报告一个错误

更快的读取速度，GB/s

5.3 3

测试中的平均数值
更快的写入速度，GB/s

4.2 1,590.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

Samsung M393A2K40BB0-CPB 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 54
读取速度，GB/s

3,726.4 5.3
写入速度，GB/s

1,590.1 4.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

522 1277

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK16GX4M2Z3466C16 8GB

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Kingston 99U5474-022.A00LF 2GB

Kingston 99U5474-022.A00LF 2GB

Lexar Co Limited LD4BU008G-H3200ULH 8GB

Lexar Co Limited LD4BU008G-H3200ULH 8GB

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Kingston 9965525-018.A00LF 4GB

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Hyundai Inc AR36C18S8K2HU416R 8GB

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Mushkin MR[A/B]4U266GHHF8G 8GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

G Skill Intl F4-4133C19-8GTZC 8GB

G Skill Intl F4-4133C19-8GTZC 8GB