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TwinMOS 8DPT5MK8-TATP 2GB
SK Hynix GKE160SO102408-2400 16GB

TwinMOS 8DPT5MK8-TATP 2GB vs SK Hynix GKE160SO102408-2400 16GB

总分
star star star star star
TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分
star star star star star
SK Hynix GKE160SO102408-2400 16GB

SK Hynix GKE160SO102408-2400 16GB

差异 规格 评论

差异

TwinMOS 8DPT5MK8-TATP 2GB 需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 15.1
    测试中的平均数值
SK Hynix GKE160SO102408-2400 16GB 需要考虑的原因
SK Hynix GKE160SO102408-2400 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 53
    左右 -61% 更低的延时
  • 更快的写入速度，GB/s
    9.8 left arrow 1,590.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
TwinMOS 8DPT5MK8-TATP 2GB
SK Hynix GKE160SO102408-2400 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    53 left arrow 33
  • 读取速度，GB/s
    3,726.4 left arrow 15.1
  • 写入速度，GB/s
    1,590.1 left arrow 9.8
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    522 left arrow 2590

TwinMOS 8DPT5MK8-TATP 2GB RAM的比较

Swissbit SEU25664D6BC2EP-30 2GB
Micron Technology 9HTF12872JY80EE1D4 1GB

SK Hynix GKE160SO102408-2400 16GB RAM的比较

Apacer Technology AQD-D4U8GN24-SE 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Qimonda 64T128020EDL2.5C2 1GB
Qimonda 64T128020EDL2.5C2 1GB
Crucial Technology BLS8G4D26BFSC.16FBR2 8GB
Crucial Technology BLS8G4D26BFSC.16FBR2 8GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Crucial Technology CT16G4DFD8266.M16FE 16GB
Crucial Technology CT16G4DFD8266.M16FE 16GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Mushkin 99[2/7/4]199[F/T] 8GB
Mushkin 99[2/7/4]199[F/T] 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology BL8G26C16U4R.8FD 8GB
Crucial Technology BL8G26C16U4R.8FD 8GB
内存RAM
Nanya Technology NT4GC64C88B1NS-DI 4GB
Nanya Technology NT4GC64C88B1NS-DI 4GB
Samsung SF4641G8CKHI6DFSDS 8GB
Samsung SF4641G8CKHI6DFSDS 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingmax Semiconductor GLAG43F-18---------- 8GB
Kingmax Semiconductor GLAG43F-18---------- 8GB
内存RAM
Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
G Skill Intl F4-3000C16-8GSXFB 8GB
G Skill Intl F4-3000C16-8GSXFB 8GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Smart Modular SMU4TDC3C0K0464SCG 4GB
Smart Modular SMU4TDC3C0K0464SCG 4GB
内存RAM
Kingston 99U5471-030.A00LF 8GB
Kingston 99U5471-030.A00LF 8GB
SK Hynix HMA81GS6JJR8N-VK 8GB
SK Hynix HMA81GS6JJR8N-VK 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
SK Hynix HMA82GU6DJR8N-WM 16GB
SK Hynix HMA82GU6DJR8N-WM 16GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
G Skill Intl F4-4266C19-8GTZSW 8GB
G Skill Intl F4-4266C19-8GTZSW 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Wilk Elektronik S.A. IR2400D464L17S/8G 8GB
Wilk Elektronik S.A. IR2400D464L17S/8G 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Crucial Technology CT16G4DFD8266.C16FD1 16GB
Crucial Technology CT16G4DFD8266.C16FD1 16GB
内存RAM
Corsair CMY16GX3M4A2133C8 4GB
Corsair CMY16GX3M4A2133C8 4GB
Samsung M391A2K43BB1-CRC 16GB
Samsung M391A2K43BB1-CRC 16GB
内存RAM