TwinMOS 8DPT5MK8-TATP 2GB vs SK Hynix HMA851S6CJR6N-VK 4GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

SK Hynix HMA851S6CJR6N-VK 4GB

SK Hynix HMA851S6CJR6N-VK 4GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 15.4

测试中的平均数值

SK Hynix HMA851S6CJR6N-VK 4GB

需要考虑的原因
SK Hynix HMA851S6CJR6N-VK 4GB

报告一个错误

低于PassMark测试中的延时，ns

37 53

左右 -43% 更低的延时
更快的写入速度，GB/s

11.6 1,590.1

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

SK Hynix HMA851S6CJR6N-VK 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 37
读取速度，GB/s

3,726.4 15.4
写入速度，GB/s

1,590.1 11.6
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

522 2321

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS8G3N169ES4.16FE 8GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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Apacer Technology 78.CAGNT.AR40B 8GB

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SK Hynix DDR2 800 2G 2GB

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Mushkin 991679ES 996679ES 2GB

Mushkin 991679ES 996679ES 2GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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SK Hynix HMA84GR7AFR4N-UH 32GB

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB

SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB

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Samsung M3 78T5663RZ3-CE6 2GB

Crucial Technology BLS4G4D26BFSC.8FBD2 4GB

Crucial Technology BLS4G4D26BFSC.8FBD2 4GB