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TwinMOS 8DPT5MK8-TATP 2GB
Team Group Inc. DDR4 3600 8GB

TwinMOS 8DPT5MK8-TATP 2GB vs Team Group Inc. DDR4 3600 8GB

总分
star star star star star
TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分
star star star star star
Team Group Inc. DDR4 3600 8GB

Team Group Inc. DDR4 3600 8GB

差异 规格 评论

差异

TwinMOS 8DPT5MK8-TATP 2GB 需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    53 left arrow 64
    左右 17% 更低的延时
  • 更快的读取速度，GB/s
    3 left arrow 17
    测试中的平均数值
Team Group Inc. DDR4 3600 8GB 需要考虑的原因
Team Group Inc. DDR4 3600 8GB
报告一个错误
  • 更快的写入速度，GB/s
    8.8 left arrow 1,590.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
TwinMOS 8DPT5MK8-TATP 2GB
Team Group Inc. DDR4 3600 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    53 left arrow 64
  • 读取速度，GB/s
    3,726.4 left arrow 17.0
  • 写入速度，GB/s
    1,590.1 left arrow 8.8
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    522 left arrow 2103

TwinMOS 8DPT5MK8-TATP 2GB RAM的比较

Swissbit SEU25664D6BC2EP-30 2GB
Micron Technology 9HTF12872JY80EE1D4 1GB

Team Group Inc. DDR4 3600 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Team Group Inc. DDR4 3600 8GB
Team Group Inc. DDR4 3600 8GB
内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
Team Group Inc. TEAMGROUP-SD4-2400 16GB
Team Group Inc. TEAMGROUP-SD4-2400 16GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston 9905713-030.A00G 8GB
Kingston 9905713-030.A00G 8GB
内存RAM
Crucial Technology CT8G4DFS824A.C8FDD1 8GB
Crucial Technology CT8G4DFS824A.C8FDD1 8GB
Crucial Technology CT8G4DFS824A.M8FH3 8GB
Crucial Technology CT8G4DFS824A.M8FH3 8GB
内存RAM
Kingston KHX1600C9D3/4G 4GB
Kingston KHX1600C9D3/4G 4GB
Corsair CMG64GX4M2D3600C18 32GB
Corsair CMG64GX4M2D3600C18 32GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Kingston 9965667-001.A00G 16GB
Kingston 9965667-001.A00G 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-PB 2GB
Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C
Ramaxel Technology RMT3170ME68F9F1600 4GB
Ramaxel Technology RMT3170ME68F9F1600 4GB
内存RAM
Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
Ramaxel Technology RMUA5110MB78HAF-2400 8GB
Ramaxel Technology RMUA5110MB78HAF-2400 8GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
G Skill Intl F4-3200C16-8GTZSK 8GB
G Skill Intl F4-3200C16-8GTZSK 8GB
内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
Crucial Technology BLS4G4D26BFSE.8FE 4GB
Crucial Technology BLS4G4D26BFSE.8FE 4GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Kingston HP32D4S2S1ME-4 4GB
Kingston HP32D4S2S1ME-4 4GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology BLS8G4D26BFSBK.8FBD 8GB
Crucial Technology BLS8G4D26BFSBK.8FBD 8GB
内存RAM
Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
Corsair CMW32GX4M4D3600C16 8GB
Corsair CMW32GX4M4D3600C16 8GB
内存RAM
Samsung M4 70T5663QZ3-CF7 2GB
Samsung M4 70T5663QZ3-CF7 2GB
Corsair CM4X8GC3000C15K4 8GB
Corsair CM4X8GC3000C15K4 8GB
内存RAM