A-DATA Technology ADOVE1A0834E 1GB vs Samsung M378A2G43BB3-CWE 16GB

总分

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

总分

Samsung M378A2G43BB3-CWE 16GB

Samsung M378A2G43BB3-CWE 16GB

差异规格评论

差异

A-DATA Technology ADOVE1A0834E 1GB

需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB

报告一个错误

Samsung M378A2G43BB3-CWE 16GB

需要考虑的原因
Samsung M378A2G43BB3-CWE 16GB

报告一个错误

低于PassMark测试中的延时，ns

38 94

左右 -147% 更低的延时
更快的读取速度，GB/s

17.9 1

测试中的平均数值
更快的写入速度，GB/s

10.4 1,165.4

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

A-DATA Technology ADOVE1A0834E 1GB

Samsung M378A2G43BB3-CWE 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

94 38
读取速度，GB/s

1,882.0 17.9
写入速度，GB/s

1,165.4 10.4
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

305 3030

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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A-DATA Technology ADOVE1A0834E 1GB

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Kingston 9965516-049.A00LF 8GB

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A-DATA Technology DQKD1A08 1GB

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Samsung 1600 CL10 Series 8GB

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Micron Technology 9ASF1G72PZ-2G9E1 8GB