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TwinMOS 9DNPBNZB-TATP 4GB
InnoDisk Corporation M4S0-8GSSOCIK 8GB

TwinMOS 9DNPBNZB-TATP 4GB vs InnoDisk Corporation M4S0-8GSSOCIK 8GB

总分
star star star star star
TwinMOS 9DNPBNZB-TATP 4GB

TwinMOS 9DNPBNZB-TATP 4GB

总分
star star star star star
InnoDisk Corporation M4S0-8GSSOCIK 8GB

InnoDisk Corporation M4S0-8GSSOCIK 8GB

差异 规格 评论

差异

TwinMOS 9DNPBNZB-TATP 4GB 需要考虑的原因
TwinMOS 9DNPBNZB-TATP 4GB
报告一个错误
InnoDisk Corporation M4S0-8GSSOCIK 8GB 需要考虑的原因
InnoDisk Corporation M4S0-8GSSOCIK 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 25
    左右 -4% 更低的延时
  • 更快的读取速度，GB/s
    15.9 left arrow 12.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.7 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
TwinMOS 9DNPBNZB-TATP 4GB
InnoDisk Corporation M4S0-8GSSOCIK 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 24
  • 读取速度，GB/s
    12.5 left arrow 15.9
  • 写入速度，GB/s
    8.4 left arrow 8.7
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2180 left arrow 2326

TwinMOS 9DNPBNZB-TATP 4GB RAM的比较

Samsung M378B2873FHS-CH9 1GB
Kingston KHX2666C16/8G 8GB

InnoDisk Corporation M4S0-8GSSOCIK 8GB RAM的比较

SpecTek Incorporated ?????????????????? 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

TwinMOS 9DNPBNZB-TATP 4GB
TwinMOS 9DNPBNZB-TATP 4GB
InnoDisk Corporation M4S0-8GSSOCIK 8GB
InnoDisk Corporation M4S0-8GSSOCIK 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Kingston 9905712-010.A00G 16GB
Kingston 9905712-010.A00G 16GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
G Skill Intl F4-3000C15-8GRBB 8GB
G Skill Intl F4-3000C15-8GRBB 8GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Kingston 9905624-009.A00G 8GB
Kingston 9905624-009.A00G 8GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
Crucial Technology CT8G4DFS832A.C8FJ 8GB
Crucial Technology CT8G4DFS832A.C8FJ 8GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Kingston X2YH1K-MIE-NX 16GB
Kingston X2YH1K-MIE-NX 16GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Kingston 9905624-036.A00G 8GB
Kingston 9905624-036.A00G 8GB
内存RAM
Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
Patriot Memory (PDP Systems) PSD44G240082 4GB
Patriot Memory (PDP Systems) PSD44G240082 4GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Kingston KF3200C16D4/16GX 16GB
Kingston KF3200C16D4/16GX 16GB
内存RAM
Kingston 99U5584-017.A00LF 4GB
Kingston 99U5584-017.A00LF 4GB
G Skill Intl F4-3200C22-32GRS 32GB
G Skill Intl F4-3200C22-32GRS 32GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Kingston XJ69DF-HYA 8GB
Kingston XJ69DF-HYA 8GB
内存RAM
SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N-UH 32GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
G Skill Intl F4-3000C14-8GVR 8GB
G Skill Intl F4-3000C14-8GVR 8GB
内存RAM
Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
Corsair CMW64GX4M8X3600C18 8GB
Corsair CMW64GX4M8X3600C18 8GB
内存RAM