RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
A-DATA Technology AO1P26KCST2-BWWS 16GB
比较
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs A-DATA Technology AO1P26KCST2-BWWS 16GB
总分
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
总分
A-DATA Technology AO1P26KCST2-BWWS 16GB
差异
规格
评论
差异
需要考虑的原因
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
报告一个错误
更快的读取速度,GB/s
2
15.6
测试中的平均数值
需要考虑的原因
A-DATA Technology AO1P26KCST2-BWWS 16GB
报告一个错误
低于PassMark测试中的延时,ns
33
96
左右 -191% 更低的延时
更快的写入速度,GB/s
14.6
1,336.0
测试中的平均数值
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
A-DATA Technology AO1P26KCST2-BWWS 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
96
33
读取速度,GB/s
2,725.2
15.6
写入速度,GB/s
1,336.0
14.6
内存带宽,mbps
6400
21300
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
438
3136
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB RAM的比较
takeMS International AG TMS1GB264C081805QI 1GB
Micron Technology 16HTF12864AY-40EB1 1GB
A-DATA Technology AO1P26KCST2-BWWS 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965669-018.A00G 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
A-DATA Technology AO1P26KCST2-BWWS 16GB
Qimonda 72T128420EFA3SB2 1GB
Kingston 9965669-025.A00G 8GB
Samsung M395T2863QZ4-CF76 1GB
A-DATA Technology AO1P24HC8T1-BSFS 8GB
Kingston 9905403-090.A01LF 4GB
Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB
Corsair CM5S16GM4800A40K2 16GB
Crucial Technology CT4G4SFS8213.C8FBR2 4GB
Kingston 99U5403-036.A00G 4GB
Kingston 9905625-096.A00G 16GB
Samsung M4 70T5663CZ3-CE6 2GB
G Skill Intl F4-2400C15-8GFXR 8GB
Samsung M393B1K70CH0-YH9 8GB
Crucial Technology CT8G4DFD824A.M16FF 8GB
G Skill Intl F3-12800CL7-4GBXM 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N
Samsung M471A1A43CB1-CRC 8GB
A-DATA Technology AD5U480016G-B 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Corsair CMK32GX4M2K4133C19 16GB
Samsung M393B2G70BH0-CH9 16GB
Samsung M392B1G73BH0-YK0 8GB
Patriot Memory (PDP Systems) PSD34G160081S 4GB
A-DATA Technology AM1U16BC4P2-B19H 4GB
Team Group Inc. Team-Elite-1333 4GB
G Skill Intl F4-4000C17-8GVKB 8GB
报告一个错误
×
Bug description
Source link