RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-3333C16-8GTZ 8GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs G Skill Intl F4-3333C16-8GTZ 8GB

总分
star star star star star
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

总分
star star star star star
G Skill Intl F4-3333C16-8GTZ 8GB

G Skill Intl F4-3333C16-8GTZ 8GB

差异 规格 评论

差异

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB 需要考虑的原因
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
报告一个错误
G Skill Intl F4-3333C16-8GTZ 8GB 需要考虑的原因
G Skill Intl F4-3333C16-8GTZ 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 96
    左右 -317% 更低的延时
  • 更快的读取速度，GB/s
    21.2 left arrow 2
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.2 left arrow 1,336.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-3333C16-8GTZ 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    96 left arrow 23
  • 读取速度，GB/s
    2,725.2 left arrow 21.2
  • 写入速度，GB/s
    1,336.0 left arrow 17.2
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    438 left arrow 4043

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB RAM的比较

takeMS International AG TMS1GB264C081805QI 1GB
Micron Technology 16HTF12864AY-40EB1 1GB

G Skill Intl F4-3333C16-8GTZ 8GB RAM的比较

Kingston 9965525-155.A00LF 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston KHX16LC9/8GX 8GB
Kingston KHX16LC9/8GX 8GB
Team Group Inc. 16GB
Team Group Inc. 16GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
G Skill Intl F4-3200C14-8GFX 8GB
G Skill Intl F4-3200C14-8GFX 8GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
G Skill Intl F4-3600C17-8GTZR 8GB
G Skill Intl F4-3600C17-8GTZR 8GB
内存RAM
Ramaxel Technology RMT3020EC58E9F1333 4GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
Kingston 9905599-010.A00G 4GB
Kingston 9905599-010.A00G 4GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Kingmax Semiconductor GSAF62F-D8---------- 4GB
Kingmax Semiconductor GSAF62F-D8---------- 4GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-TF 32GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
内存RAM
Kingston 99U5458-008.A00LF 4GB
Kingston 99U5458-008.A00LF 4GB
G Skill Intl F4-4000C19-16GTZSW 16GB
G Skill Intl F4-4000C19-16GTZSW 16GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-3333C16-8GTZ 8GB
G Skill Intl F4-3333C16-8GTZ 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology BLS4G4D26BFSC.8FBR2 4GB
Crucial Technology BLS4G4D26BFSC.8FBR2 4GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Corsair CMD16GX4M4B3200C16-R 4GB
Corsair CMD16GX4M4B3200C16-R 4GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Team Group Inc. TEAMGROUP-D4-3866 4GB
Team Group Inc. TEAMGROUP-D4-3866 4GB
内存RAM
SK Hynix HYMP112S64CP6-S6 1GB
SK Hynix HYMP112S64CP6-S6 1GB
G Skill Intl F4-4000C16-16GTZRA 16GB
G Skill Intl F4-4000C16-16GTZRA 16GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Dust Leopard DDR4-2400 C17 4GB 4GB
Dust Leopard DDR4-2400 C17 4GB 4GB
内存RAM