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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Gold Key Technology Co Ltd NMSO480E82-3200E 8GB
比较
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs Gold Key Technology Co Ltd NMSO480E82-3200E 8GB
总分
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
总分
Gold Key Technology Co Ltd NMSO480E82-3200E 8GB
差异
规格
评论
差异
需要考虑的原因
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
报告一个错误
更快的读取速度,GB/s
2
17.3
测试中的平均数值
需要考虑的原因
Gold Key Technology Co Ltd NMSO480E82-3200E 8GB
报告一个错误
低于PassMark测试中的延时,ns
32
96
左右 -200% 更低的延时
更快的写入速度,GB/s
14.3
1,336.0
测试中的平均数值
更高的内存带宽,mbps
25600
6400
左右 4 更高的带宽
规格
完整的技术规格清单
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Gold Key Technology Co Ltd NMSO480E82-3200E 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
96
32
读取速度,GB/s
2,725.2
17.3
写入速度,GB/s
1,336.0
14.3
内存带宽,mbps
6400
25600
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-25600, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度
5-5-5-15 / 800 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
438
3208
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB RAM的比较
takeMS International AG TMS1GB264C081805QI 1GB
Micron Technology 16HTF12864AY-40EB1 1GB
Gold Key Technology Co Ltd NMSO480E82-3200E 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M395T2863QZ4-CF76 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Patriot Memory (PDP Systems) 1600 CL10 Series 8GB
G Skill Intl F4-3200C16-16GSXFB 16GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology CB8GU2666.C8ET 8GB
Kingston 9965516-112.A00LF 16GB
Kingston 9905624-008.A00G 8GB
AMD R538G1601U2S-UO 8GB
SK Hynix HMA451U7AFR8N-TF 4GB
Samsung M471B5273CH0-CH9 4GB
Kingston 9965669-017.A00G 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
G Skill Intl F4-4200C19-4GTZ 4GB
Kingston KHX2400C11D3/4GX 4GB
Crucial Technology BLS8G4D240FSB.16FARG 8GB
Kingston 9965516-112.A00LF 16GB
Kingston 9905599-010.A00G 4GB
SK Hynix HMT425S6CFR6A-PB 2GB
G Skill Intl F4-4266C19-4GTZ 4GB
Samsung M471B5273CH0-CH9 4GB
Crucial Technology CT16G4DFD8213.C16FDD 16GB
AMD R538G1601U2S-UO 8GB
Patriot Memory (PDP Systems) PSD416G21332 16GB
Kingston 9965525-140.A00LF 8GB
Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N
HT Micron HTH5AN8G8NCJR-VKD 8GB
G Skill Intl F5-5600J4040C16G 16GB
报告一个错误
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Bug description
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