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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Kingston KHX2400C15S4/4G 4GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs Kingston KHX2400C15S4/4G 4GB

总分
star star star star star
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

总分
star star star star star
Kingston KHX2400C15S4/4G 4GB

Kingston KHX2400C15S4/4G 4GB

差异 规格 评论

差异

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB 需要考虑的原因
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 18.2
    测试中的平均数值
Kingston KHX2400C15S4/4G 4GB 需要考虑的原因
Kingston KHX2400C15S4/4G 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 96
    左右 -243% 更低的延时
  • 更快的写入速度，GB/s
    14.8 left arrow 1,336.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Kingston KHX2400C15S4/4G 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    96 left arrow 28
  • 读取速度，GB/s
    2,725.2 left arrow 18.2
  • 写入速度，GB/s
    1,336.0 left arrow 14.8
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    438 left arrow 3038

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB RAM的比较

takeMS International AG TMS1GB264C081805QI 1GB
Micron Technology 16HTF12864AY-40EB1 1GB

Kingston KHX2400C15S4/4G 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-155.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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G Skill Intl F3-17000CL9-4GBXLD 4GB
G Skill Intl F4-3200C15-16GTZKW 16GB
G Skill Intl F4-3200C15-16GTZKW 16GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Kingston 9965662-010.A00G 16GB
Kingston 9965662-010.A00G 16GB
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Kingston 99U5584-017.A00LF 4GB
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内存RAM
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G Skill Intl F4-3000C16-8GTRG 8GB
G Skill Intl F4-3000C16-8GTRG 8GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
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Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N
内存RAM
Samsung M471A5244CB0-CWE 4GB
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G Skill Intl F4-3200C14-16GTZKO 16GB
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内存RAM
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SK Hynix DDR2 800 2G 2GB
SK Hynix HMA82GU6CJR8N-VK 16GB
SK Hynix HMA82GU6CJR8N-VK 16GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
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A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
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内存RAM
Kingston KHX1866C10D3/8GX 8GB
Kingston KHX1866C10D3/8GX 8GB
Kingston KHX2133C14D4/8G 8GB
Kingston KHX2133C14D4/8G 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-3000C16-8GRS 8GB
G Skill Intl F4-3000C16-8GRS 8GB
内存RAM
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Crucial Technology BLS4G4D240FSA.8FARG 4GB
Crucial Technology BLS4G4D240FSA.8FARG 4GB
内存RAM
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Team Group Inc. Vulcan-1600 4GB
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Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Kingston 9905743-034.A00G 8GB
Kingston 9905743-034.A00G 8GB
内存RAM