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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Kingston KWTHG4-MIE 16GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs Kingston KWTHG4-MIE 16GB

总分
star star star star star
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

总分
star star star star star
Kingston KWTHG4-MIE 16GB

Kingston KWTHG4-MIE 16GB

差异 规格 评论

差异

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB 需要考虑的原因
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 14.7
    测试中的平均数值
Kingston KWTHG4-MIE 16GB 需要考虑的原因
Kingston KWTHG4-MIE 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 96
    左右 -174% 更低的延时
  • 更快的写入速度，GB/s
    11.1 left arrow 1,336.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 6400
    左右 4 更高的带宽

规格

完整的技术规格清单
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Kingston KWTHG4-MIE 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    96 left arrow 35
  • 读取速度，GB/s
    2,725.2 left arrow 14.7
  • 写入速度，GB/s
    1,336.0 left arrow 11.1
  • 内存带宽，mbps
    6400 left arrow 25600
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    438 left arrow 2855

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB RAM的比较

takeMS International AG TMS1GB264C081805QI 1GB
Micron Technology 16HTF12864AY-40EB1 1GB

Kingston KWTHG4-MIE 16GB RAM的比较

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Kingston ACR128X64D2S800C6 1GB
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Micron Technology 16ATF2G64HZ-2G3E1 16GB
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Samsung M3 78T5663EH3-CF7 2GB
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内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
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内存RAM
Micron Technology 8ATF1G64AZ-3G2R1 8GB
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Kingston 9905403-038.A00LF 4GB
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内存RAM
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Patriot Memory (PDP Systems) PSD44G266641 4GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
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Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
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内存RAM
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SK Hynix HMT451S6BFR8A-PB 4GB
Crucial Technology CT16G4SFRA32A.C16FP 16GB
Crucial Technology CT16G4SFRA32A.C16FP 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
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Corsair CMT32GX4M4C3000C15 8GB
内存RAM
takeMS International AG TMS2GB264D083805EV 2GB
takeMS International AG TMS2GB264D083805EV 2GB
Crucial Technology BL16G30C15U4WL.M16FE 16GB
Crucial Technology BL16G30C15U4WL.M16FE 16GB
内存RAM
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Kingston 99U5474-023.A00LF 4GB
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Crucial Technology CT8G4DFS824A.M8FD 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Kingston KHX3600C17D4/16GX 16GB
Kingston KHX3600C17D4/16GX 16GB
内存RAM