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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Micron Technology 16ATF4G64HZ-3G2E1 32GB
比较
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs Micron Technology 16ATF4G64HZ-3G2E1 32GB
总分
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
总分
Micron Technology 16ATF4G64HZ-3G2E1 32GB
差异
规格
评论
差异
需要考虑的原因
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
报告一个错误
更快的读取速度,GB/s
2
16.4
测试中的平均数值
需要考虑的原因
Micron Technology 16ATF4G64HZ-3G2E1 32GB
报告一个错误
低于PassMark测试中的延时,ns
38
96
左右 -153% 更低的延时
更快的写入速度,GB/s
13.7
1,336.0
测试中的平均数值
更高的内存带宽,mbps
25600
6400
左右 4 更高的带宽
规格
完整的技术规格清单
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Micron Technology 16ATF4G64HZ-3G2E1 32GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
96
38
读取速度,GB/s
2,725.2
16.4
写入速度,GB/s
1,336.0
13.7
内存带宽,mbps
6400
25600
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度
5-5-5-15 / 800 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
438
3206
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB RAM的比较
takeMS International AG TMS1GB264C081805QI 1GB
Micron Technology 16HTF12864AY-40EB1 1GB
Micron Technology 16ATF4G64HZ-3G2E1 32GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
A-DATA Technology DQVE1908 512MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M471B1G73DB0-YK0 8GB
G Skill Intl F4-3000C16-8GISB 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Micron Technology 16ATF4G64HZ-3G2E1 32GB
Kingston 99U5469-045.A00LF 4GB
Panram International Corporation PUD43000C158G2NJK 8GB
Samsung M3 78T2863EHS-CF7 1GB
Dust Leopard DDR4-2400 CL17 8GB 8GB
Kingston KHX1600C9S3L/4G 4GB
Corsair CMU32GX4M2C3000C15 16GB
Kingston 99U5471-056.A00LF 8GB
Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
Mushkin 991988 (996988) 4GB
G Skill Intl F4-4000C19-8GTZSW 8GB
Corsair CMD16GX3M2A1866C9 8GB
Corsair CMK32GX4M4K4133C19 8GB
Samsung M393B5170FH0-CH9 4GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Corsair CMD64GX4M8B2800C14 8GB
Asgard VMA45UG-MEC1U2AW1 8GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Kingston 9965433-034.A00LF 4GB
Kingston ACR26D4S9S1KA-4 4GB
Samsung M393B1K70CH0-CH9 8GB
Micron Technology 16ATF2G64HZ-2G3H1 16GB
SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology BL8G24C16U4B.8FB 8GB
报告一个错误
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Bug description
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