Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs Micron Technology 4ATF51264AZ-3G2E1 4GB

总分

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

总分

Micron Technology 4ATF51264AZ-3G2E1 4GB

Micron Technology 4ATF51264AZ-3G2E1 4GB

差异规格评论

差异

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

需要考虑的原因
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

报告一个错误

更快的读取速度，GB/s

2 17.5

测试中的平均数值

Micron Technology 4ATF51264AZ-3G2E1 4GB

需要考虑的原因
Micron Technology 4ATF51264AZ-3G2E1 4GB

报告一个错误

低于PassMark测试中的延时，ns

48 96

左右 -100% 更低的延时
更快的写入速度，GB/s

8.3 1,336.0

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Micron Technology 4ATF51264AZ-3G2E1 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

96 48
读取速度，GB/s

2,725.2 17.5
写入速度，GB/s

1,336.0 8.3
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

438 2196

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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Micron Technology 4ATF51264AZ-3G2E1 4GB

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Samsung M471B5273EB0-CK0 4GB

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Team Group Inc. Vulcan-1600 4GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

G Skill Intl F4-3200C16-16GVK 16GB

G Skill Intl F4-3200C16-16GVK 16GB

G Skill Intl F3-14900CL8-4GBXM 4GB

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Crucial Technology CT16G4DFRA266.C16FP 16GB

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Kingston 9965525-018.A00LF 4GB

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Essencore Limited KD4AGS88A-26N1600 16GB

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Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

Corsair CMD16GX4M2B3000C15 8GB

Corsair CMD16GX4M2B3000C15 8GB