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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Samsung M393A2G40DBD-CP1???? 16GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs Samsung M393A2G40DBD-CP1???? 16GB

总分
star star star star star
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

总分
star star star star star
Samsung M393A2G40DBD-CP1???? 16GB

Samsung M393A2G40DBD-CP1???? 16GB

差异 规格 评论

差异

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB 需要考虑的原因
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
报告一个错误
Samsung M393A2G40DBD-CP1???? 16GB 需要考虑的原因
Samsung M393A2G40DBD-CP1???? 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 96
    左右 -182% 更低的延时
  • 更快的读取速度，GB/s
    9.6 left arrow 2
    测试中的平均数值
  • 更快的写入速度，GB/s
    5.8 left arrow 1,336.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Samsung M393A2G40DBD-CP1???? 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    96 left arrow 34
  • 读取速度，GB/s
    2,725.2 left arrow 9.6
  • 写入速度，GB/s
    1,336.0 left arrow 5.8
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    438 left arrow 1839

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB RAM的比较

takeMS International AG TMS1GB264C081805QI 1GB
Micron Technology 16HTF12864AY-40EB1 1GB

Samsung M393A2G40DBD-CP1???? 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393B1K70QB0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Samsung M393A2G40DBD-CP1???? 16GB
Samsung M393A2G40DBD-CP1???? 16GB
内存RAM
Kingston 9905316-106.A02LF 1GB
Kingston 9905316-106.A02LF 1GB
Crucial Technology BL8G30C15U4W.M8FE1 8GB
Crucial Technology BL8G30C15U4W.M8FE1 8GB
内存RAM
Avexir Technologies Corporation DDR3-1600 CL10 8GB
Avexir Technologies Corporation DDR3-1600 CL10 8GB
Corsair CMT32GX4M2K4000C19 16GB
Corsair CMT32GX4M2K4000C19 16GB
内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
Corsair CMU16GX4M2D3000C16 8GB
Corsair CMU16GX4M2D3000C16 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-2666C18-32GRS 32GB
G Skill Intl F4-2666C18-32GRS 32GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Micron Technology 8ATF1G64AZ-3G2E1 8GB
Micron Technology 8ATF1G64AZ-3G2E1 8GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
Kingston 9905663-016.A00G 16GB
Kingston 9905663-016.A00G 16GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology CT8G4DFD824A.M16FB 8GB
Crucial Technology CT8G4DFD824A.M16FB 8GB
内存RAM
Kingston 9905403-515.A00LF 8GB
Kingston 9905403-515.A00LF 8GB
Kingston KHX3200C18D4/4G 4GB
Kingston KHX3200C18D4/4G 4GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
A-DATA Technology AX4S2800316G18-B 16GB
A-DATA Technology AX4S2800316G18-B 16GB
内存RAM
Mushkin 991988 (996988) 4GB
Mushkin 991988 (996988) 4GB
Crucial Technology BL8G36C16U4R.M8FE1 8GB
Crucial Technology BL8G36C16U4R.M8FE1 8GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-3333C16-8GTZSK 8GB
G Skill Intl F4-3333C16-8GTZSK 8GB
内存RAM
SK Hynix HMT451S6DFR8A-PB 4GB
SK Hynix HMT451S6DFR8A-PB 4GB
Crucial Technology CT4G4SFS8266.C8FE 4GB
Crucial Technology CT4G4SFS8266.C8FE 4GB
内存RAM
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Corsair CMK16GX4M4B3000C15 4GB
Corsair CMK16GX4M4B3000C15 4GB
内存RAM