Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs SK Hynix HMA41GR7MFR8N-TF 8GB

总分

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

总分

SK Hynix HMA41GR7MFR8N-TF 8GB

SK Hynix HMA41GR7MFR8N-TF 8GB

差异规格评论

差异

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

需要考虑的原因
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

报告一个错误

更快的读取速度，GB/s

2 10.1

测试中的平均数值

SK Hynix HMA41GR7MFR8N-TF 8GB

需要考虑的原因
SK Hynix HMA41GR7MFR8N-TF 8GB

报告一个错误

低于PassMark测试中的延时，ns

56 96

左右 -71% 更低的延时
更快的写入速度，GB/s

8.6 1,336.0

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

SK Hynix HMA41GR7MFR8N-TF 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

96 56
读取速度，GB/s

2,725.2 10.1
写入速度，GB/s

1,336.0 8.6
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

438 2307

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B1G70BH0-YK0 8GB

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SK Hynix HMA425S6AFR6N-UH 2GB

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Nanya Technology NT512T64U88B0BY-3C 512MB

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A-DATA Technology AD4S3200316G22-BHYD 16GB

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Swissbit MEU25664D6BC2EP-30 2GB

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Crucial Technology BL8G32C16U4B.8FE 8GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Micron Technology 8ATF1G64HZ-3G2J1 8GB

Micron Technology 8ATF1G64HZ-3G2J1 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Samsung M393A5143DB0-CRC 4GB

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AMD R5316G1609U2K 8GB

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Crucial Technology CT16G4SFD8266.C16FN 16GB

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Elpida EBJ40UG8EFU0-GN-F 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB

Kingston 9905734-018.A00G 16GB

Kingston 9905734-018.A00G 16GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

Micron Technology 8ATF2G64AZ-3G2B1 16GB

Micron Technology 8ATF2G64AZ-3G2B1 16GB