Unifosa Corporation GU502203EP0201 1GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

Unifosa Corporation GU502203EP0201 1GB vs Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

总分

Unifosa Corporation GU502203EP0201 1GB

Unifosa Corporation GU502203EP0201 1GB

总分

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

差异规格评论

差异

Unifosa Corporation GU502203EP0201 1GB

需要考虑的原因
Unifosa Corporation GU502203EP0201 1GB

报告一个错误

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 25

左右 -4% 更低的延时
更快的读取速度，GB/s

15.6 12.6

测试中的平均数值
更快的写入速度，GB/s

12.1 7.7

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Unifosa Corporation GU502203EP0201 1GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 24
读取速度，GB/s

12.6 15.6
写入速度，GB/s

7.7 12.1
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1381 2852

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Unifosa Corporation GU502203EP0201 1GB

Unifosa Corporation GU502203EP0201 1GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-2400C17-4GNT 4GB

G Skill Intl F4-2400C17-4GNT 4GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Transcend Information TS2GSH64V6B 16GB

Transcend Information TS2GSH64V6B 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-2400C16-16GFX 16GB

G Skill Intl F4-2400C16-16GFX 16GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Crucial Technology CT8G4DFRA32A.C8FP 8GB

Crucial Technology CT8G4DFRA32A.C8FP 8GB

Kingston 9905403-515.A00LF 8GB

Kingston 9905403-515.A00LF 8GB

G Skill Intl F4-3000C16-16GTRS 16GB

G Skill Intl F4-3000C16-16GTRS 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

G Skill Intl F4-2400C16-16GFX 16GB

G Skill Intl F4-2400C16-16GFX 16GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

SK Hynix HMA42GR7AFR4N-UH 16GB

SK Hynix HMA42GR7AFR4N-UH 16GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

G Skill Intl F4-4000C19-4GVK 4GB

G Skill Intl F4-4000C19-4GVK 4GB

Kingston KHX1866C10D3/4G 4GB

Kingston KHX1866C10D3/4G 4GB

Crucial Technology BL16G36C16U4B.M16FE1 16GB

Crucial Technology BL16G36C16U4B.M16FE1 16GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

G Skill Intl F4-3200C14-16GTZR 16GB

G Skill Intl F4-3200C14-16GTZR 16GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO10240

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

G Skill Intl F4-2400C15Z8GNT 8GB

G Skill Intl F4-2400C15Z8GNT 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Crucial Technology BLS8G4D30BESBK.8FD 8GB

Crucial Technology BLS8G4D30BESBK.8FD 8GB