RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
总分
Crucial Technology BLS4G4D240FSE.8FBD 4GB
总分
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
更快的读取速度,GB/s
16.9
15.6
测试中的平均数值
需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
29
左右 -21% 更低的延时
更快的写入速度,GB/s
12.1
12.0
测试中的平均数值
规格
完整的技术规格清单
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
29
24
读取速度,GB/s
16.9
15.6
写入速度,GB/s
12.0
12.1
内存带宽,mbps
19200
19200
Other
描述
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2601
2852
Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较
SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology CT25664AA800.M16FG 2GB
Crucial Technology CT8G4DFS8213.C8FAD1 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-3200C14-32GVK 32GB
A-DATA Technology AD73I1C1674EV 4GB
G Skill Intl F4-3200C16-16GTZRX 16GB
Samsung M471B5173QH0-YK0 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4SFD8213.C16FADP 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
Micron Technology 72ASS4G72LZ-2G3A2 32GB
A-DATA Technology AD73I1B1672EG 2GB
G Skill Intl F4-4600C19-8GTZSWC 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
ASint Technology SSA302G08-EGN1C 4GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
Kingston 9965516-112.A00LF 16GB
Crucial Technology CT16G4DFD824A.C16FBR 16GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Micron Technology V-GeN D4V16GL24A8R 16GB
A-DATA Technology AD73I1C1674EV 4GB
G Skill Intl F4-3600C19-8GSXK 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 99U5702-101.A00G 8GB
SK Hynix HMT451S6BFR8A-PB 4GB
Teikon TMA451S6AFR8N-TFSC 4GB
报告一个错误
×
Bug description
Source link