Unifosa Corporation HU564404EP0200 4GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

Unifosa Corporation HU564404EP0200 4GB vs Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

总分

Unifosa Corporation HU564404EP0200 4GB

Unifosa Corporation HU564404EP0200 4GB

总分

Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

差异规格评论

差异

Unifosa Corporation HU564404EP0200 4GB

需要考虑的原因
Unifosa Corporation HU564404EP0200 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 32

左右 19% 更低的延时

Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

需要考虑的原因
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

报告一个错误

更快的读取速度，GB/s

19.4 14.1

测试中的平均数值
更快的写入速度，GB/s

16.3 9.5

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Unifosa Corporation HU564404EP0200 4GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 32
读取速度，GB/s

14.1 19.4
写入速度，GB/s

9.5 16.3
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2354 3726

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Chun Well Technology Holding Limited ND4U1636181DRLDE 1

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Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB