Unifosa Corporation HU564404EP0200 4GB vs Corsair CMW16GX4M2Z3600C18 8GB

总分

Unifosa Corporation HU564404EP0200 4GB

Unifosa Corporation HU564404EP0200 4GB

总分

Corsair CMW16GX4M2Z3600C18 8GB

Corsair CMW16GX4M2Z3600C18 8GB

差异规格评论

差异

Unifosa Corporation HU564404EP0200 4GB

需要考虑的原因
Unifosa Corporation HU564404EP0200 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 29

左右 10% 更低的延时

Corsair CMW16GX4M2Z3600C18 8GB

需要考虑的原因
Corsair CMW16GX4M2Z3600C18 8GB

报告一个错误

更快的读取速度，GB/s

18.2 14.1

测试中的平均数值
更快的写入速度，GB/s

15.4 9.5

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Unifosa Corporation HU564404EP0200 4GB

Corsair CMW16GX4M2Z3600C18 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 29
读取速度，GB/s

14.1 18.2
写入速度，GB/s

9.5 15.4
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2354 3559

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology AO1P32NC8W1-BDAS 8GB

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G Skill Intl F4-4000C17-8GTZRB 8GB

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Samsung M3 93T5750CZA-CE6 2GB

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Micron Technology 4ATF51264HZ-2G3E2 4GB

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Team Group Inc. TEAMGROUP-UD4-2133 8GB

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Samsung M471B5273EB0-CK0 4GB

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Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

Micron Technology 16ATF2G64HZ-2G3H1 16GB

Micron Technology 16ATF2G64HZ-2G3H1 16GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Patriot Memory (PDP Systems) PSD44G213341 4GB

Patriot Memory (PDP Systems) PSD44G213341 4GB

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G Skill Intl F4-2400C15-4GIS 4GB

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Panram International Corporation M424051 4GB

Panram International Corporation M424051 4GB