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Unifosa Corporation HU564404EP0200 4GB
Crucial Technology BLS8G4D240FSC.M16FAD 8GB

Unifosa Corporation HU564404EP0200 4GB vs Crucial Technology BLS8G4D240FSC.M16FAD 8GB

总分
star star star star star
Unifosa Corporation HU564404EP0200 4GB

Unifosa Corporation HU564404EP0200 4GB

总分
star star star star star
Crucial Technology BLS8G4D240FSC.M16FAD 8GB

Crucial Technology BLS8G4D240FSC.M16FAD 8GB

差异 规格 评论

差异

Unifosa Corporation HU564404EP0200 4GB 需要考虑的原因
Unifosa Corporation HU564404EP0200 4GB
报告一个错误
Crucial Technology BLS8G4D240FSC.M16FAD 8GB 需要考虑的原因
Crucial Technology BLS8G4D240FSC.M16FAD 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 26
    左右 -18% 更低的延时
  • 更快的读取速度，GB/s
    16.8 left arrow 14.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.3 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Unifosa Corporation HU564404EP0200 4GB
Crucial Technology BLS8G4D240FSC.M16FAD 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 22
  • 读取速度，GB/s
    14.1 left arrow 16.8
  • 写入速度，GB/s
    9.5 left arrow 13.3
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2354 left arrow 3097

Unifosa Corporation HU564404EP0200 4GB RAM的比较

Kingston KF556C40-16 16GB
Apacer Technology 76.D105G.D090B 16GB

Crucial Technology BLS8G4D240FSC.M16FAD 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
A-DATA Technology VDQVE1B16 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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A-DATA Technology DDR3 1600 4GB
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Crucial Technology BLS4G4D240FSC.8FBR2 4GB
内存RAM
Crucial Technology CT25664AA800.M16FG 2GB
Crucial Technology CT25664AA800.M16FG 2GB
Crucial Technology BL16G32C16U4RL.M8FB1 16GB
Crucial Technology BL16G32C16U4RL.M8FB1 16GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Apacer Technology 78.C1GMM.AUC0B 8GB
Apacer Technology 78.C1GMM.AUC0B 8GB
内存RAM
Kingston KF560C40-16 16GB
Kingston KF560C40-16 16GB
Corsair CMU32GX4M4C3000C15 8GB
Corsair CMU32GX4M4C3000C15 8GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Kingston MSI24D4S7S8MH-8 8GB
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内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Kingston 9905598-044.A00G 16GB
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内存RAM
Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
Crucial Technology BLS8G4D240FSC.M16FAD 8GB
Crucial Technology BLS8G4D240FSC.M16FAD 8GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2800C14D4/4GX 4GB
Kingston KHX2800C14D4/4GX 4GB
内存RAM
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-4133C19-8GTZRF 8GB
G Skill Intl F4-4133C19-8GTZRF 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Crucial Technology BLS16G4S240FSD.16FBR 16GB
Crucial Technology BLS16G4S240FSD.16FBR 16GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Apacer Technology 78.C1GMM.DFW0C 8GB
Apacer Technology 78.C1GMM.DFW0C 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
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Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
G Skill Intl F4-2400C16-16GRS 16GB
G Skill Intl F4-2400C16-16GRS 16GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CMR128GX4M8C3000C16 16GB
Corsair CMR128GX4M8C3000C16 16GB
内存RAM