Wilk Elektronik S.A. GR1333D364L9/4G 4GB vs A-DATA Technology AO1E34RCSV1-BD7S 16GB

总分

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

总分

A-DATA Technology AO1E34RCSV1-BD7S 16GB

A-DATA Technology AO1E34RCSV1-BD7S 16GB

差异规格评论

差异

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

需要考虑的原因
Wilk Elektronik S.A. GR1333D364L9/4G 4GB

报告一个错误

低于PassMark测试中的延时，ns

44 59

左右 25% 更低的延时

A-DATA Technology AO1E34RCSV1-BD7S 16GB

需要考虑的原因
A-DATA Technology AO1E34RCSV1-BD7S 16GB

报告一个错误

更快的读取速度，GB/s

16.2 10.9

测试中的平均数值
更快的写入速度，GB/s

13.7 7.5

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

A-DATA Technology AO1E34RCSV1-BD7S 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 59
读取速度，GB/s

10.9 16.2
写入速度，GB/s

7.5 13.7
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1853 2727

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMR128GX4M8Z2933C16 16GB

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Samsung M471B5273DH0-CK0 4GB

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SK Hynix HMA82GR7MFR4N-UH 16GB

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Mushkin 991988 (996988) 4GB

Mushkin 991988 (996988) 4GB

Gold Key Technology Co Ltd NMUD480E86-3200 8GB

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Samsung M3 93T5750CZA-CE6 2GB

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