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Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Ramaxel Technology RMR1870EC58E9F1333 4GB
比较
Wilk Elektronik S.A. GR1333D364L9/4G 4GB vs Ramaxel Technology RMR1870EC58E9F1333 4GB
总分
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
总分
Ramaxel Technology RMR1870EC58E9F1333 4GB
差异
规格
评论
差异
需要考虑的原因
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
报告一个错误
需要考虑的原因
Ramaxel Technology RMR1870EC58E9F1333 4GB
报告一个错误
低于PassMark测试中的延时,ns
38
44
左右 -16% 更低的延时
更快的读取速度,GB/s
13.5
10.9
测试中的平均数值
更快的写入速度,GB/s
8.4
7.5
测试中的平均数值
规格
完整的技术规格清单
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Ramaxel Technology RMR1870EC58E9F1333 4GB
主要特点
存储器类型
DDR3
DDR3
PassMark中的延时,ns
44
38
读取速度,GB/s
10.9
13.5
写入速度,GB/s
7.5
8.4
内存带宽,mbps
10600
10600
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
时序/时钟速度
7-7-7-20 / 1333 MHz
7-7-7-20 / 1333 MHz
排名PassMark (越多越好)
1853
2259
Wilk Elektronik S.A. GR1333D364L9/4G 4GB RAM的比较
Kingston ACR26D4U9S1KA-4 4GB
Ramaxel Technology RMR1870EC58E9F1333 4GB RAM的比较
Samsung M378B5273CH0-CH9 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Hexon Technology Pte Ltd HEXON 1GB
Kingston LV36D4U1S8HD-8XR 8GB
Kingston 9905403-156.A00LF 2GB
Kingston KC5N22-MIE 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905630-051.A00G 16GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT8G4DFS8266.C8FE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE320UD204808-2666 32GB
Samsung M471B5273CH0-CH9 4GB
Panram International Corporation D4N2400PS-8G 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung T471A1K43CB1-CRC 8GB
Samsung M471B5773DH0-CH9 2GB
G Skill Intl F4-3000C14-16GTZ 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Patriot Memory (PDP Systems) 4133 C19 Series 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
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