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Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
比较
Wilk Elektronik S.A. GR1333D364L9/4G 4GB vs Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
总分
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
总分
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
差异
规格
评论
差异
需要考虑的原因
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
报告一个错误
需要考虑的原因
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
报告一个错误
低于PassMark测试中的延时,ns
26
44
左右 -69% 更低的延时
更快的读取速度,GB/s
15.6
10.9
测试中的平均数值
更快的写入速度,GB/s
11.6
7.5
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
44
26
读取速度,GB/s
10.9
15.6
写入速度,GB/s
7.5
11.6
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1853
2808
Wilk Elektronik S.A. GR1333D364L9/4G 4GB RAM的比较
Ramaxel Technology RMR1870EC58E9F1333 4GB
Kingston ACR26D4U9S1KA-4 4GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
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A-DATA Technology VDQVE1B16 2GB
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G Skill Intl F3-10600CL9-2GBNT 2GB
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Ramaxel Technology RMT3170EB68F9W1600 4GB
Netac Technology Co Ltd EKBLACK4163216AD 8GB
Samsung M378B5273CH0-CH9 4GB
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Samsung M378A1K43BB1-CRC 8GB
Kingston 9965525-018.A00LF 4GB
Crucial Technology CT16G4DFD824A.C16FJ 16GB
Samsung DDR3 8GB 1600MHz 8GB
V-GEN D4S4GL32A16TS 4GB
Kingston K1N7HK-ELC 2GB
Kingston 9905598-025.A00G 8GB
报告一个错误
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Bug description
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