Wilk Elektronik S.A. GR1333D364L9/4G 4GB vs Corsair CMR16GX4M2Z2933C16 8GB

总分

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

总分

Corsair CMR16GX4M2Z2933C16 8GB

Corsair CMR16GX4M2Z2933C16 8GB

差异规格评论

差异

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

需要考虑的原因
Wilk Elektronik S.A. GR1333D364L9/4G 4GB

报告一个错误

低于PassMark测试中的延时，ns

44 66

左右 33% 更低的延时

Corsair CMR16GX4M2Z2933C16 8GB

需要考虑的原因
Corsair CMR16GX4M2Z2933C16 8GB

报告一个错误

更快的读取速度，GB/s

17 10.9

测试中的平均数值
更快的写入速度，GB/s

8.5 7.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Corsair CMR16GX4M2Z2933C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 66
读取速度，GB/s

10.9 17.0
写入速度，GB/s

7.5 8.5
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1853 2063

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 99U5584-005.A00LF 4GB

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Elpida EBJ40UG8BBU0-GN-F 4GB

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Samsung DDR3 8GB 1600MHz 8GB

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Gold Key Technology Co Ltd GKE160SO102408-3200 16GB

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G Skill Intl F4-2800C16-4GRK 4GB

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Samsung M471A1K43BB1-CRC 8GB

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Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Kingston KHX4000C19D4/8GX 8GB

Kingston KHX4000C19D4/8GX 8GB

Kingston KTC1G-UDIMM 1GB

Kingston KTC1G-UDIMM 1GB

Corsair CMWX16GC3600C18W2D 16GB

Corsair CMWX16GC3600C18W2D 16GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Crucial Technology CT16G4DFD8266.M16FE 16GB

Crucial Technology CT16G4DFD8266.M16FE 16GB

Kingston 9905403-447.A00LF 4GB

Kingston 9905403-447.A00LF 4GB

Corsair CMT64GX4M8X3000C15 8GB

Corsair CMT64GX4M8X3000C15 8GB

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

SK Hynix HMA82GR7MFR4N-UH 16GB

SK Hynix HMA82GR7MFR4N-UH 16GB