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Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB
比较
Wilk Elektronik S.A. GR1333D364L9/4G 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB
总分
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB
差异
规格
评论
差异
需要考虑的原因
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
报告一个错误
更快的读取速度,GB/s
10.9
10
测试中的平均数值
更快的写入速度,GB/s
7.5
7.0
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB
报告一个错误
低于PassMark测试中的延时,ns
35
44
左右 -26% 更低的延时
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
44
35
读取速度,GB/s
10.9
10.0
写入速度,GB/s
7.5
7.0
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1853
2068
Wilk Elektronik S.A. GR1333D364L9/4G 4GB RAM的比较
Ramaxel Technology RMR1870EC58E9F1333 4GB
Kingston ACR26D4U9S1KA-4 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB RAM的比较
Samsung M378B5673EH1-CF8 2GB
SK Hynix HMA82GS6CJR8N-VK 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N
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Corsair CMR32GX4M4C3600C18 8GB
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G Skill Intl F4-4000C16-16GVKA 16GB
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SK Hynix HMA81GU7CJR8N-VK 8GB
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Crucial Technology CT32G4DFD832A.C16FE 32GB
Kingston 99U5471-052.A00LF 8GB
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Kingston 9965669-032.A00G 16GB
Corsair CML8GX3M2A1866C9 4GB
Golden Empire CL15-15-15 D4-2133 8GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Crucial Technology CT16G4DFD8266.M16FH 16GB
报告一个错误
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Bug description
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