Wilk Elektronik S.A. GR1333D364L9/4G 4GB vs Samsung V-GeN D4S16GL32A8TS 16GB

总分

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

总分

Samsung V-GeN D4S16GL32A8TS 16GB

Samsung V-GeN D4S16GL32A8TS 16GB

差异规格评论

差异

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

需要考虑的原因
Wilk Elektronik S.A. GR1333D364L9/4G 4GB

报告一个错误

低于PassMark测试中的延时，ns

44 57

左右 23% 更低的延时

Samsung V-GeN D4S16GL32A8TS 16GB

需要考虑的原因
Samsung V-GeN D4S16GL32A8TS 16GB

报告一个错误

更快的读取速度，GB/s

19.1 10.9

测试中的平均数值
更快的写入速度，GB/s

10.1 7.5

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Samsung V-GeN D4S16GL32A8TS 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 57
读取速度，GB/s

10.9 19.1
写入速度，GB/s

7.5 10.1
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1853 2377

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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