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Wilk Elektronik S.A. GR2666D464L19S/8G 8GB
Samsung M378A2K43EB1-CWE 16GB

Wilk Elektronik S.A. GR2666D464L19S/8G 8GB vs Samsung M378A2K43EB1-CWE 16GB

总分
star star star star star
Wilk Elektronik S.A. GR2666D464L19S/8G 8GB

Wilk Elektronik S.A. GR2666D464L19S/8G 8GB

总分
star star star star star
Samsung M378A2K43EB1-CWE 16GB

Samsung M378A2K43EB1-CWE 16GB

差异 规格 评论

差异

Wilk Elektronik S.A. GR2666D464L19S/8G 8GB 需要考虑的原因
Wilk Elektronik S.A. GR2666D464L19S/8G 8GB
报告一个错误
Samsung M378A2K43EB1-CWE 16GB 需要考虑的原因
Samsung M378A2K43EB1-CWE 16GB
报告一个错误
  • 更快的读取速度，GB/s
    18.5 left arrow 14.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.8 left arrow 10.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 21300
    左右 1.2 更高的带宽

规格

完整的技术规格清单
Wilk Elektronik S.A. GR2666D464L19S/8G 8GB
Samsung M378A2K43EB1-CWE 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 33
  • 读取速度，GB/s
    14.7 left arrow 18.5
  • 写入速度，GB/s
    10.2 left arrow 13.8
  • 内存带宽，mbps
    21300 left arrow 25600
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2764 left arrow 3341

Wilk Elektronik S.A. GR2666D464L19S/8G 8GB RAM的比较

A-DATA Technology AD4S3200316G22-BHYD 16GB
AMD AE34G1601U1 4GB

Samsung M378A2K43EB1-CWE 16GB RAM的比较

Crucial Technology BLT16G4D30AETA.K16FB 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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