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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
G Skill Intl F4-4000C19-16GTZR 16GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB vs G Skill Intl F4-4000C19-16GTZR 16GB

总分
star star star star star
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

总分
star star star star star
G Skill Intl F4-4000C19-16GTZR 16GB

G Skill Intl F4-4000C19-16GTZR 16GB

差异 规格 评论

差异

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB 需要考虑的原因
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 26
    左右 4% 更低的延时
G Skill Intl F4-4000C19-16GTZR 16GB 需要考虑的原因
G Skill Intl F4-4000C19-16GTZR 16GB
报告一个错误
  • 更快的读取速度，GB/s
    18.8 left arrow 12.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.9 left arrow 7.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
G Skill Intl F4-4000C19-16GTZR 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 26
  • 读取速度，GB/s
    12.6 left arrow 18.8
  • 写入速度，GB/s
    7.2 left arrow 17.9
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2051 left arrow 4053

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB RAM的比较

Team Group Inc. Xtreem-LV-2133 4GB
Kingston KHX1866C10S3L/8G 8GB

G Skill Intl F4-4000C19-16GTZR 16GB RAM的比较

Kingston 9905403-156.A00LF 2GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
G Skill Intl F4-4000C19-16GTZR 16GB
G Skill Intl F4-4000C19-16GTZR 16GB
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AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
Corsair CMK16GX4M1A2400C16 16GB
Corsair CMK16GX4M1A2400C16 16GB
内存RAM
Samsung M471B5773DH0-CK0 2GB
Samsung M471B5773DH0-CK0 2GB
Apacer Technology 78.CAGR4.DFC0B 8GB
Apacer Technology 78.CAGR4.DFC0B 8GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Crucial Technology CT16G4SFD8213.M16FB 16GB
Crucial Technology CT16G4SFD8213.M16FB 16GB
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A-DATA Technology AD73I1C1674EV 4GB
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Apacer Technology 78.BAGM6.40C0B 4GB
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Lexar Co Limited LD4AU016G-H3200GST 16GB
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内存RAM
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Kingston 9905678-156.A00G 8GB
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PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
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Samsung M391A1G43EB1-CRC 8GB
内存RAM
SK Hynix HMA81GS6CJR8N-XN 8GB
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SK Hynix HMA81GS6CJR8N-XN 8GB
SK Hynix HMA81GS6CJR8N-XN 8GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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