Wilk Elektronik S.A. GY1866D364L9A/4G 4GB vs Kingston HP26D4S9S8MHF-8 8GB

总分

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

总分

Kingston HP26D4S9S8MHF-8 8GB

Kingston HP26D4S9S8MHF-8 8GB

差异规格评论

差异

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

需要考虑的原因
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 36

左右 31% 更低的延时

Kingston HP26D4S9S8MHF-8 8GB

需要考虑的原因
Kingston HP26D4S9S8MHF-8 8GB

报告一个错误

更快的读取速度，GB/s

14.8 12.6

测试中的平均数值
更快的写入速度，GB/s

12.0 7.2

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Kingston HP26D4S9S8MHF-8 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 36
读取速度，GB/s

12.6 14.8
写入速度，GB/s

7.2 12.0
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2051 2711

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Kingston HP26D4S9S8MHF-8 8GB

Kingston HP26D4S9S8MHF-8 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HMA451U7AFR8N-TF 4GB

SK Hynix HMA451U7AFR8N-TF 4GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Corsair CMW32GX4M4D3600C16 8GB

Corsair CMW32GX4M4D3600C16 8GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology BL8G32C16U4RL.M8FE1 8GB

Crucial Technology BL8G32C16U4RL.M8FE1 8GB

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

G Skill Intl F4-2400C17-8GSXW 8GB

G Skill Intl F4-2400C17-8GSXW 8GB

Kingston 9905471-001.A01LF 2GB

Kingston 9905471-001.A01LF 2GB

G Skill Intl F4-3200C16-4GVKB 4GB

G Skill Intl F4-3200C16-4GVKB 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 16ATF2G64HZ-3G2E1 16GB

Micron Technology 16ATF2G64HZ-3G2E1 16GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB

Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8G

Samsung M378B5273DH0-CH9 4GB

Samsung M378B5273DH0-CH9 4GB

G Skill Intl F4-2933C14-16GFX 16GB

G Skill Intl F4-2933C14-16GFX 16GB

Corsair CMV4GX3M1B1600C11 4GB

Corsair CMV4GX3M1B1600C11 4GB

Kingston 9905713-030.A00G 8GB

Kingston 9905713-030.A00G 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

G Skill Intl F4-5333C22-8GTRG 8GB

G Skill Intl F4-5333C22-8GTRG 8GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

G Skill Intl F4-3200C16-8GRKB 8GB

G Skill Intl F4-3200C16-8GRKB 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

G Skill Intl F4-3000C14-16GVKD 16GB

G Skill Intl F4-3000C14-16GVKD 16GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Samsung M378A5143EB1-CPB 4GB

Samsung M378A5143EB1-CPB 4GB