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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Samsung M471A5143DB0-CPB 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB vs Samsung M471A5143DB0-CPB 4GB

总分
star star star star star
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

总分
star star star star star
Samsung M471A5143DB0-CPB 4GB

Samsung M471A5143DB0-CPB 4GB

差异 规格 评论

差异

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB 需要考虑的原因
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 39
    左右 36% 更低的延时
Samsung M471A5143DB0-CPB 4GB 需要考虑的原因
Samsung M471A5143DB0-CPB 4GB
报告一个错误
  • 更快的读取速度，GB/s
    14.1 left arrow 12.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.7 left arrow 7.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Samsung M471A5143DB0-CPB 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 39
  • 读取速度，GB/s
    12.6 left arrow 14.1
  • 写入速度，GB/s
    7.2 left arrow 10.7
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2051 left arrow 2183

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB RAM的比较

Team Group Inc. Xtreem-LV-2133 4GB
Kingston KHX1866C10S3L/8G 8GB

Samsung M471A5143DB0-CPB 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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