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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
比较
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB vs Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
总分
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
总分
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
差异
规格
评论
差异
需要考虑的原因
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
报告一个错误
低于PassMark测试中的延时,ns
25
31
左右 19% 更低的延时
需要考虑的原因
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
报告一个错误
更快的读取速度,GB/s
20.5
12.6
测试中的平均数值
更快的写入速度,GB/s
15.5
7.2
测试中的平均数值
更高的内存带宽,mbps
25600
10600
左右 2.42 更高的带宽
规格
完整的技术规格清单
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
31
读取速度,GB/s
12.6
20.5
写入速度,GB/s
7.2
15.5
内存带宽,mbps
10600
25600
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
2051
3649
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB RAM的比较
Team Group Inc. Xtreem-LV-2133 4GB
Kingston KHX1866C10S3L/8G 8GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Maxsun MSD44G24Q0 4GB
A-DATA Technology VDQVE1B16 2GB
Corsair CM4B8G1L2666A18S4 8GB
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SK Hynix HMA81GR7MFR8N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
SpecTek Incorporated 16G2666CL19 16GB
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Crucial Technology CT51264BD160B.C16F 4GB
Corsair CMD16GX4M4B3200C16 4GB
Qimonda 64T128020EDL2.5C2 1GB
Kingston 9965589-033.D00G 8GB
报告一个错误
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