RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
选择RAM 1
选择RAM 2
比较
DDR3 RAM列表
所有内存模块，按延迟增加排序
№
带宽
延迟, ns
读取速度，GB/s
写入速度，GB/s
№
3361
RAM
Kingmax Semiconductor FLJG46F-D8KMBA 8GB
Latency
47
Read speed
4.7
Write speed
3.0
№
3362
RAM
SK Hynix HMT351U7CFR8A-PB 4GB
Latency
47
Read speed
10.0
Write speed
8.9
№
3363
RAM
Micron Technology 16KTF51264HZ-1G4M1 4GB
Latency
47
Read speed
8.4
Write speed
4.9
№
3364
RAM
Micron Technology 18JSF1G72AZ-1G9E1 8GB
Latency
47
Read speed
10.8
Write speed
8.8
№
3365
RAM
Samsung M471B1G73QH0-YK0 8GB
Latency
47
Read speed
11.8
Write speed
8.0
№
3366
RAM
Samsung M471B5273DH0-CH9 4GB
Latency
47
Read speed
9.3
Write speed
5.9
№
3367
RAM
Ramaxel Technology RMR1881ED58E9W1600 4GB
Latency
47
Read speed
7.4
Write speed
7.0
№
3368
RAM
Micron Technology 36JSZF51272PZ1G4G1 4GB
Latency
47
Read speed
9.9
Write speed
7.8
№
3369
RAM
Samsung SGB724GABBA28R4-SD 32GB
Latency
47
Read speed
10.7
Write speed
7.8
№
3370
RAM
SanMax Technologies Inc. SMD-N4G28HP-16K 4GB
Latency
48
Read speed
10.9
Write speed
6.4
№
3371
RAM
Nanya Technology NT2GC64B8HC0NF-CG 2GB
Latency
48
Read speed
11.6
Write speed
8.3
№
3372
RAM
Nanya Technology NT4GC72C4PG0NK-CG 4GB
Latency
48
Read speed
8.9
Write speed
8.4
№
3373
RAM
SK Hynix HMT41GS6AFR8A-PB 8GB
Latency
48
Read speed
11.6
Write speed
7.8
№
3374
RAM
Transcend Information TS1GKR72V8H 8GB
Latency
48
Read speed
12.7
Write speed
9.7
№
3375
RAM
Samsung M391B5673EH1-CF8 2GB
Latency
48
Read speed
12.0
Write speed
7.3
№
3376
RAM
SK Hynix HMT151R7TFR4C-H9 4GB
Latency
48
Read speed
10.1
Write speed
7.0
№
3377
RAM
SK Hynix HMT325U6EFR8C-PB 2GB
Latency
48
Read speed
11.7
Write speed
8.5
№
3378
RAM
Samsung M393B1K70DH0-YH9 8GB
Latency
48
Read speed
10.0
Write speed
6.9
№
3379
RAM
Samsung M393B1K70DH0-YK0 8GB
Latency
48
Read speed
10.6
Write speed
8.7
№
3380
RAM
Samsung M393B5170GB0-CH9 4GB
Latency
48
Read speed
10.5
Write speed
7.9
«
166
167
168
169
170
171
»
最新比较
Kingston ACR256X64D3S1333C9 2GB
Micron Technology 4ATF51264AZ-2G3B1 4GB
Team Group Inc. UD5-6400 16GB
Wilk Elektronik S.A. W-MEM2666S416G 16GB
Kingston 99U5474-013.A00LF 2GB
Kingston 9905744-077.A00G 16GB
Kingston 99U5584-017.A00LF 4GB
G Skill Intl F4-3600C16-8GTZRC 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology BLT8G4D30BET4K.C8FD 8GB
Kingston KHX1600C9S3L/4G 4GB
Samsung M378A1K43DB2-CTD 8GB
Crucial Technology CT102464BA160B.M16 8GB
GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB
Samsung M393B1K70QB0-CK0 8GB
Micron Technology 18ASF1G72PZ-2G3B1 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Corsair CMK8GX4M1A2666C16 8GB
Crucial Technology CT51264BD160B.C16F 4GB
Gold Key Technology Co Ltd NMUD480E85-3000D 8GB
AMD R934G2401U1S 4GB
Kingston HX316C10F/8 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
Corsair CMK32GX4M2D3200C16 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Kingston 9905316-131.A00LF 1GB
G Skill Intl F5-6400J3239G16G 16GB
Transcend Information TS2GSH64V4B 16GB
报告一个错误
×
Bug description
Source link
Русский 
English 
Español 
Português 
Deutsch 
Français 
Italiano 
Polski 
日本語 
