RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Samsung M378A5244CB0-CWE 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs Samsung M378A5244CB0-CWE 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Overall score
Samsung M378A5244CB0-CWE 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Report a bug
Below the latency in the PassMark tests, ns
28
34
Around 18% lower latency
Reasons to consider
Samsung M378A5244CB0-CWE 4GB
Report a bug
Faster reading speed, GB/s
16.7
12.4
Average value in the tests
Faster write speed, GB/s
12.3
9.6
Average value in the tests
Higher memory bandwidth, mbps
25600
12800
Around 2 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Samsung M378A5244CB0-CWE 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
34
Read speed, GB/s
12.4
16.7
Write speed, GB/s
9.6
12.3
Memory bandwidth, mbps
12800
25600
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed
9-9-9-24 / 1600 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2329
2584
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB RAM comparisons
Crucial Technology BLS8G3N18AES4.16FE 8GB
Nanya Technology NT4GC64B8HD0NS-CG 4GB
Samsung M378A5244CB0-CWE 4GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Samsung M378A5244CB0-CWE 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology BLS16G4S26BFSD.16FD 16GB
Kingston 99U5474-028.A00LF 4GB
Crucial Technology BL8G36C16U4B.M8FE1 8GB
Kingston KHX3200C18D4/8G 8GB
Crucial Technology BLS8G4D30AESBK.M8FE 8GB
Samsung M393A1G40DB0-CPB 8GB
Team Group Inc. TEAMGROUP-lnd-2133 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Avant Technology J644GU44J2320NQ 32GB
A-DATA Technology ADOVE1A0834E 1GB
Corsair CMSX32GX4M2A3000C16 16GB
G Skill Intl F3-14900CL9-4GBSR 4GB
Micron Technology AFLD48VH1P 8GB
A-DATA Technology DDR2 800G 2GB
Panram International Corporation PUD42400C154G4NJK 4GB
Crucial Technology CT25664BA160B.C16F 2GB
Micron Technology 36ASF4G72PZ-2G3B1 32GB
Samsung M471B1G73DB0-YK0 8GB
Crucial Technology BL8G26C16U4R.8FD 8GB
Samsung M393B1G70BH0-CK0 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB
takeMS International AG TMS2GB264D082-805G 2GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB
Report a bug
×
Bug description
Source link