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Micron Technology 18ASF1G72PZ-2G1A2 8GB
Samsung M393A1G40EB1-CRC 8GB

Micron Technology 18ASF1G72PZ-2G1A2 8GB vs Samsung M393A1G40EB1-CRC 8GB

Overall score
star star star star star
Micron Technology 18ASF1G72PZ-2G1A2 8GB

Micron Technology 18ASF1G72PZ-2G1A2 8GB

Overall score
star star star star star
Samsung M393A1G40EB1-CRC 8GB

Samsung M393A1G40EB1-CRC 8GB

Differences Specifications Comments

Differences

Micron Technology 18ASF1G72PZ-2G1A2 8GB Reasons to consider
Micron Technology 18ASF1G72PZ-2G1A2 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    49 left arrow 52
    Around 6% lower latency
  • Faster write speed, GB/s
    8.3 left arrow 7.7
    Average value in the tests
Samsung M393A1G40EB1-CRC 8GB Reasons to consider
Samsung M393A1G40EB1-CRC 8GB
Report a bug
  • Higher memory bandwidth, mbps
    19200 left arrow 17000
    Around 1.13 higher bandwidth

Specifications

Complete list of technical specifications
Micron Technology 18ASF1G72PZ-2G1A2 8GB
Samsung M393A1G40EB1-CRC 8GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    49 left arrow 52
  • Read speed, GB/s
    10.5 left arrow 10.5
  • Write speed, GB/s
    8.3 left arrow 7.7
  • Memory bandwidth, mbps
    17000 left arrow 19200
Other
  • Description
    PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2374 left arrow 2236

Micron Technology 18ASF1G72PZ-2G1A2 8GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Samsung M393A1G40EB1-CRC 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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